High-quality monolayer superconductor NbSe2 grown by chemical vapour deposition

The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and...

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Detalles Bibliográficos
Autores principales: Wang, Hong, Huang, Xiangwei, Lin, Junhao, Cui, Jian, Chen, Yu, Zhu, Chao, Liu, Fucai, Zeng, Qingsheng, Zhou, Jiadong, Yu, Peng, Wang, Xuewen, He, Haiyong, Tsang, Siu Hon, Gao, Weibo, Suenaga, Kazu, Ma, Fengcai, Yang, Changli, Lu, Li, Yu, Ting, Teo, Edwin Hang Tong, Liu, Guangtong, Liu, Zheng
Otros Autores: School of Electrical and Electronic Engineering
Formato: Journal Article
Lenguaje:English
Publicado: 2018
Materias:
Acceso en línea:https://hdl.handle.net/10356/89473
http://hdl.handle.net/10220/44960
Descripción
Sumario:The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and substrate-induced disorders/defects. Such severe growth requirements limit the exploration of novel two-dimensional superconductivity and related nanodevices. Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material—NbSe2. Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe2, and confirms the low defect concentration in our high-quality film, which is the key to two-dimensional superconductivity. By using monolayer chemical vapour deposited graphene as a protective capping layer, thickness-dependent superconducting properties are observed in as-grown NbSe2 with a transition temperature increasing from 1.0 K in monolayer to 4.56 K in 10-layer.