Low-threshold optically pumped lasing in highly strained germanium nanowires
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their u...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2018
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| Online Access: | https://hdl.handle.net/10356/89496 http://hdl.handle.net/10220/44966 |
| _version_ | 1826111352385568768 |
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| author | Bao, Shuyu Kim, Daeik Onwukaeme, Chibuzo Gupta, Shashank Saraswat, Krishna Lee, Kwang Hong Kim, Yeji Min, Dabin Jung, Yongduck Qiu, Haodong Wang, Hong Fitzgerald, Eugene A. Tan, Chuan Seng Nam, Donguk |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Bao, Shuyu Kim, Daeik Onwukaeme, Chibuzo Gupta, Shashank Saraswat, Krishna Lee, Kwang Hong Kim, Yeji Min, Dabin Jung, Yongduck Qiu, Haodong Wang, Hong Fitzgerald, Eugene A. Tan, Chuan Seng Nam, Donguk |
| author_sort | Bao, Shuyu |
| collection | NTU |
| description | The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavourable bandstructures. Highly strained germanium with its fundamentally altered bandstructure has emerged as a potential low-threshold gain medium, but there has yet to be a successful demonstration of lasing from this seemingly promising material system. Here we demonstrate a low-threshold, compact group IV laser that employs a germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium. The amplified material gain in strained germanium can sufficiently overcome optical losses at 83 K, thus allowing the observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm−2. Our demonstration opens new possibilities for group IV lasers for photonic-integrated circuits. |
| first_indexed | 2024-10-01T02:49:17Z |
| format | Journal Article |
| id | ntu-10356/89496 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:49:17Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/894962020-03-07T14:02:38Z Low-threshold optically pumped lasing in highly strained germanium nanowires Bao, Shuyu Kim, Daeik Onwukaeme, Chibuzo Gupta, Shashank Saraswat, Krishna Lee, Kwang Hong Kim, Yeji Min, Dabin Jung, Yongduck Qiu, Haodong Wang, Hong Fitzgerald, Eugene A. Tan, Chuan Seng Nam, Donguk School of Electrical and Electronic Engineering Nanoparticle Transmission Electron Microscopy The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavourable bandstructures. Highly strained germanium with its fundamentally altered bandstructure has emerged as a potential low-threshold gain medium, but there has yet to be a successful demonstration of lasing from this seemingly promising material system. Here we demonstrate a low-threshold, compact group IV laser that employs a germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium. The amplified material gain in strained germanium can sufficiently overcome optical losses at 83 K, thus allowing the observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm−2. Our demonstration opens new possibilities for group IV lasers for photonic-integrated circuits. NRF (Natl Research Foundation, S’pore) Published version 2018-06-06T03:43:44Z 2019-12-06T17:27:00Z 2018-06-06T03:43:44Z 2019-12-06T17:27:00Z 2017 Journal Article Bao, S., Kim, D., Onwukaeme, C., Gupta, S., Saraswat, K., Lee, K. H., et al. (2017). Low-threshold optically pumped lasing in highly strained germanium nanowires. Nature Communications, 8(1), 1845-. 2041-1723 https://hdl.handle.net/10356/89496 http://hdl.handle.net/10220/44966 10.1038/s41467-017-02026-w en Nature Communications © 2017 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commonslicense, unless indicated otherwise in a credit line to the material. If material is not included in the article’sCreative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/ licenses/by/4.0/. 7 p. application/pdf |
| spellingShingle | Nanoparticle Transmission Electron Microscopy Bao, Shuyu Kim, Daeik Onwukaeme, Chibuzo Gupta, Shashank Saraswat, Krishna Lee, Kwang Hong Kim, Yeji Min, Dabin Jung, Yongduck Qiu, Haodong Wang, Hong Fitzgerald, Eugene A. Tan, Chuan Seng Nam, Donguk Low-threshold optically pumped lasing in highly strained germanium nanowires |
| title | Low-threshold optically pumped lasing in highly strained germanium nanowires |
| title_full | Low-threshold optically pumped lasing in highly strained germanium nanowires |
| title_fullStr | Low-threshold optically pumped lasing in highly strained germanium nanowires |
| title_full_unstemmed | Low-threshold optically pumped lasing in highly strained germanium nanowires |
| title_short | Low-threshold optically pumped lasing in highly strained germanium nanowires |
| title_sort | low threshold optically pumped lasing in highly strained germanium nanowires |
| topic | Nanoparticle Transmission Electron Microscopy |
| url | https://hdl.handle.net/10356/89496 http://hdl.handle.net/10220/44966 |
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