Low-threshold optically pumped lasing in highly strained germanium nanowires

Low-threshold optically pumped lasing in highly strained germanium nanowires

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The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their u...

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Bibliographic Details
Main Authors: Bao, Shuyu, Kim, Daeik, Onwukaeme, Chibuzo, Gupta, Shashank, Saraswat, Krishna, Lee, Kwang Hong, Kim, Yeji, Min, Dabin, Jung, Yongduck, Qiu, Haodong, Wang, Hong, Fitzgerald, Eugene A., Tan, Chuan Seng, Nam, Donguk
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2018
Subjects:
Nanoparticle
Transmission Electron Microscopy
Online Access:https://hdl.handle.net/10356/89496
http://hdl.handle.net/10220/44966
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