Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding
Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Online Access: | https://hdl.handle.net/10356/90142 http://hdl.handle.net/10220/48410 |
| _version_ | 1811685782561226752 |
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| author | Abdul Kadir Wang, Yue Lee, Kenneth E. Tan, Chuan Seng Chua, Soo Jin Fitzgerald, Eugene A. Zhang, Li Lee, Kwang Hong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Abdul Kadir Wang, Yue Lee, Kenneth E. Tan, Chuan Seng Chua, Soo Jin Fitzgerald, Eugene A. Zhang, Li Lee, Kwang Hong |
| author_sort | Abdul Kadir |
| collection | NTU |
| description | Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer. |
| first_indexed | 2024-10-01T04:50:00Z |
| format | Journal Article |
| id | ntu-10356/90142 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:50:00Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/901422020-03-07T14:02:39Z Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding Abdul Kadir Wang, Yue Lee, Kenneth E. Tan, Chuan Seng Chua, Soo Jin Fitzgerald, Eugene A. Zhang, Li Lee, Kwang Hong School of Electrical and Electronic Engineering Si CMOS AlGaN Layers DRNTU::Engineering::Electrical and electronic engineering Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer. NRF (Natl Research Foundation, S’pore) Accepted version 2019-05-28T06:05:33Z 2019-12-06T17:41:42Z 2019-05-28T06:05:33Z 2019-12-06T17:41:42Z 2018 Journal Article Zhang, L., Lee, K. H., Abdul Kadir., Wang, Y., Lee, K. E., Tan, C. S., . . . Fitzgerald, E. A. (2018). Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding. Japanese Journal of Applied Physics, 57(5), 051002-. doi:10.7567/JJAP.57.051002 0021-4922 https://hdl.handle.net/10356/90142 http://hdl.handle.net/10220/48410 10.7567/JJAP.57.051002 en Japanese Journal of Applied Physics © 2018 The Japan Society of Applied Physics. All rights reserved. This paper was published in Japanese Journal of Applied Physics and is made available with permission of The Japan Society of Applied Physics. 16 p. application/pdf |
| spellingShingle | Si CMOS AlGaN Layers DRNTU::Engineering::Electrical and electronic engineering Abdul Kadir Wang, Yue Lee, Kenneth E. Tan, Chuan Seng Chua, Soo Jin Fitzgerald, Eugene A. Zhang, Li Lee, Kwang Hong Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding |
| title | Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding |
| title_full | Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding |
| title_fullStr | Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding |
| title_full_unstemmed | Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding |
| title_short | Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding |
| title_sort | curvature evolution of 200 mm diameter gan on insulator wafer fabricated through metalorganic chemical vapor deposition and bonding |
| topic | Si CMOS AlGaN Layers DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/90142 http://hdl.handle.net/10220/48410 |
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