Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si...

Full description

Bibliographic Details
Main Authors: Abdul Kadir, Wang, Yue, Lee, Kenneth E., Tan, Chuan Seng, Chua, Soo Jin, Fitzgerald, Eugene A., Zhang, Li, Lee, Kwang Hong
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
Si CMOS
AlGaN Layers
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/90142
http://hdl.handle.net/10220/48410

Similar Items

Similar Items