Computation of charge collection probability for any collecting junction shape
Electron-beam-induced current (EBIC) of the scanning electron microscope (SEM) has been widely used for semiconductor devices and materials characterizations. The charge collection probability within a collecting junction plays an important role in determining the EBIC current. The conventional...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/90402 http://hdl.handle.net/10220/6321 http://www.isic2009.org/ http://ieeexplore.ieee.org/search/freesrchabstract.jsp?tp=&arnumber=5403687&queryText%3DComputation+of+Charge+Collection+Probability+for+Any+Collecting+Junction+Shape%26openedRefinements%3D*%26searchField%3DSearch+All |
| Summary: | Electron-beam-induced current (EBIC) of the
scanning electron microscope (SEM) has been widely used for
semiconductor devices and materials characterizations. The
charge collection probability within a collecting junction plays an
important role in determining the EBIC current. The
conventional approach starts by solving the continuity equation
to obtain the charge carrier density and then the analytical
expression for the charge collection probability. Knowing the
analytical expression of the charge collection probability
enhances the study and development of the measurement
technique. However, the conventional method usually requires
lot of mathematical effort and the derived analytical expression is
valid only for one particular junction shape. This paper presents
a simple and straight forward computational method for the
charge collection probability distribution within the charge
collecting junction well by utilizing the reciprocity theorem and
finite difference method with the junction shape serves as the
boundary conditions. It not only simplifies the computation but
also applicable to any junction shape as long as the drift-diffusion
model remains valid. This method was verified using a U-shaped
junction well. |
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