Computation of charge collection probability for any collecting junction shape

Electron-beam-induced current (EBIC) of the scanning electron microscope (SEM) has been widely used for semiconductor devices and materials characterizations. The charge collection probability within a collecting junction plays an important role in determining the EBIC current. The conventional...

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Bibliographic Details
Main Authors: Ong, Vincent K. S., Tan, Chee Chin, Kurniawan, Oka, Li, Erping
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2010
Subjects:
Online Access:https://hdl.handle.net/10356/90402
http://hdl.handle.net/10220/6321
http://www.isic2009.org/
http://ieeexplore.ieee.org/search/freesrchabstract.jsp?tp=&arnumber=5403687&queryText%3DComputation+of+Charge+Collection+Probability+for+Any+Collecting+Junction+Shape%26openedRefinements%3D*%26searchField%3DSearch+All

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