Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air
Zinc oxide (ZnO) films were synthesized by thermal oxidation of metallic zinc films in air. The influence of annealing temperatures ranging from 320 to 1000 °C on the structural and optical properties of ZnO films is investigated systematically using x-ray diffraction and room temperature photolu...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Online Access: | https://hdl.handle.net/10356/90405 http://hdl.handle.net/10220/18818 |
| _version_ | 1811693329527603200 |
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| author | Wang, Y. G. Lau, S. P. Lee, H. W. Yu, S. F. Tay, B. K. Zhang, X. H. Hng, H. H. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Wang, Y. G. Lau, S. P. Lee, H. W. Yu, S. F. Tay, B. K. Zhang, X. H. Hng, H. H. |
| author_sort | Wang, Y. G. |
| collection | NTU |
| description | Zinc oxide (ZnO) films were synthesized by thermal oxidation of metallic zinc films in air. The
influence of annealing temperatures ranging from 320 to 1000 °C on the structural and optical
properties of ZnO films is investigated systematically using x-ray diffraction and room temperature
photoluminescence (PL). The films show a polycrystalline hexagonal wurtzite structure without
preferred orientation. Room temperature PL spectra of the ZnO films display two emission bands,
predominant excitonic ultraviolet (UV) emission and weak deep level visible emission. It is
observed that the ZnO film annealed at 410 °C exhibits the strongest UV emission intensity and
narrowest full width at half maximum (81 meV) among the temperature ranges studied. The
excellent UV emission from the film annealed at 410 °C is attributed to the good crystalline quality
of the ZnO film and the low rate of formation of intrinsic defects at such low temperature. The
visible emission consists of two components in the green and yellow range, and they show different
temperature dependent behavior from UV emission. Their possible origins are discussed. |
| first_indexed | 2024-10-01T06:49:57Z |
| format | Journal Article |
| id | ntu-10356/90405 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:49:57Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/904052020-06-01T10:21:16Z Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air Wang, Y. G. Lau, S. P. Lee, H. W. Yu, S. F. Tay, B. K. Zhang, X. H. Hng, H. H. School of Electrical and Electronic Engineering School of Materials Science & Engineering DRNTU::Science::Physics Zinc oxide (ZnO) films were synthesized by thermal oxidation of metallic zinc films in air. The influence of annealing temperatures ranging from 320 to 1000 °C on the structural and optical properties of ZnO films is investigated systematically using x-ray diffraction and room temperature photoluminescence (PL). The films show a polycrystalline hexagonal wurtzite structure without preferred orientation. Room temperature PL spectra of the ZnO films display two emission bands, predominant excitonic ultraviolet (UV) emission and weak deep level visible emission. It is observed that the ZnO film annealed at 410 °C exhibits the strongest UV emission intensity and narrowest full width at half maximum (81 meV) among the temperature ranges studied. The excellent UV emission from the film annealed at 410 °C is attributed to the good crystalline quality of the ZnO film and the low rate of formation of intrinsic defects at such low temperature. The visible emission consists of two components in the green and yellow range, and they show different temperature dependent behavior from UV emission. Their possible origins are discussed. Published version 2014-02-18T04:53:33Z 2019-12-06T17:47:14Z 2014-02-18T04:53:33Z 2019-12-06T17:47:14Z 2003 2003 Journal Article Wang, Y. G., Lau, S. P., Lee, H. W., Yu, S. F., Tay, B. K., Zhang, X. H., et al. (2003). Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air. Journal of applied physics, 94(1), 354-358. https://hdl.handle.net/10356/90405 http://hdl.handle.net/10220/18818 10.1063/1.1577819 en Journal of applied physics © 2003 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at : [DOI: http://dx.doi.org/10.1063/1.1577819]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Science::Physics Wang, Y. G. Lau, S. P. Lee, H. W. Yu, S. F. Tay, B. K. Zhang, X. H. Hng, H. H. Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air |
| title | Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air |
| title_full | Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air |
| title_fullStr | Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air |
| title_full_unstemmed | Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air |
| title_short | Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air |
| title_sort | photoluminescence study of zno films prepared by thermal oxidation of zn metallic films in air |
| topic | DRNTU::Science::Physics |
| url | https://hdl.handle.net/10356/90405 http://hdl.handle.net/10220/18818 |
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