Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE
We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical pro...
| Main Authors: | , , , |
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| Format: | Journal Article |
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2011
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| Online Access: | https://hdl.handle.net/10356/90410 http://hdl.handle.net/10220/6954 |
| _version_ | 1826115572884045824 |
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| author | Sun, Z. Z. Radhakrishnan, K. Agrawal, M. Dharmarasu, Nethaji |
| author_facet | Sun, Z. Z. Radhakrishnan, K. Agrawal, M. Dharmarasu, Nethaji |
| author_sort | Sun, Z. Z. |
| collection | NTU |
| description | We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical properties of GaN were investigated as a function of Ga-flux. For the first time, the presence of 2DEG is demonstrated in AlGaN/GaN HEMT structure on Si (111) substrate by PA-MBE. A high electron mobility of 1100 cm2/V.sec is obtained with a sheet carrier density of 9 × 1012 cm-2. |
| first_indexed | 2024-10-01T03:57:22Z |
| format | Journal Article |
| id | ntu-10356/90410 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T03:57:22Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/904102020-03-07T13:57:24Z Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE Sun, Z. Z. Radhakrishnan, K. Agrawal, M. Dharmarasu, Nethaji DRNTU::Engineering::Materials::Microelectronics and semiconductor materials We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical properties of GaN were investigated as a function of Ga-flux. For the first time, the presence of 2DEG is demonstrated in AlGaN/GaN HEMT structure on Si (111) substrate by PA-MBE. A high electron mobility of 1100 cm2/V.sec is obtained with a sheet carrier density of 9 × 1012 cm-2. Accepted version 2011-08-01T07:40:56Z 2019-12-06T17:47:18Z 2011-08-01T07:40:56Z 2019-12-06T17:47:18Z 2011 2011 Journal Article Dharmarasu, N., Radhakrishnan, K., Sun, Z. Z., & Agrawal, M. (2011). Realization of Two Dimensional Electron Gas in AlGaN/GaN HEMT Structure Grown on Si (111) by PA-MBE. Physica Status Solidi C, 8 (7-8), 2075–2077. https://hdl.handle.net/10356/90410 http://hdl.handle.net/10220/6954 10.1002/pssc.201001046 159549 Physica status solidi C © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Sun, Z. Z. Radhakrishnan, K. Agrawal, M. Dharmarasu, Nethaji Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| title | Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| title_full | Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| title_fullStr | Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| title_full_unstemmed | Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| title_short | Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| title_sort | realization of two dimensional electron gas in algan gan hemt structure grown on si 111 by pa mbe |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials |
| url | https://hdl.handle.net/10356/90410 http://hdl.handle.net/10220/6954 |
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