Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE
We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical pro...
| Main Authors: | , , , |
|---|---|
| Format: | Journal Article |
| Published: |
2011
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/90410 http://hdl.handle.net/10220/6954 |