Spectroscopic characterization of 1.3 μm GaInNAs quantum well structures grown by metal-organical vapour phase epm,itaxy
We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation sPLEd spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energi...
Similar Items
-
Optical characteristics of 1.55 μm GaInNAs multi-quantum wells
by: Sun, Handong, et al.
Published: (2009) -
Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy
by: Sun, Handong, et al.
Published: (2009) -
Long-wavelength monolithic gaInNAs vertical-cavity optical amplifiers
by: Clark, Antony H., et al.
Published: (2009) -
Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy
by: Sun, Handong, et al.
Published: (2009) -
Quantum well intermixing in GaInNAs/GaAs structures
by: Sun, Handong, et al.
Published: (2009)