Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source/drain back-gated architecture. Although the subthreshold swing (~180 mV/dec) and drain-induced barrier lowering (~500 mV/V) are high due thick BOX as gate oxide, the fabricated Schottky t...
Päätekijät: | Cui, Guangda, Lee, Pooi See, Chi, Dong Zhi, Chin, Yoke King, Hoe, Keat Mun, Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Lo, Guo-Qiang |
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Muut tekijät: | School of Materials Science & Engineering |
Aineistotyyppi: | Journal Article |
Kieli: | English |
Julkaistu: |
2012
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Aiheet: | |
Linkit: | https://hdl.handle.net/10356/90576 http://hdl.handle.net/10220/8343 |
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