Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel

Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel

We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source/drain back-gated architecture. Although the subthreshold swing (~180 mV/dec) and drain-induced barrier lowering (~500 mV/V) are high due thick BOX as gate oxide, the fabricated Schottky t...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Cui, Guangda, Lee, Pooi See, Chi, Dong Zhi, Chin, Yoke King, Hoe, Keat Mun, Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Lo, Guo-Qiang
Muut tekijät: School of Materials Science & Engineering
Aineistotyyppi: Journal Article
Kieli:English
Julkaistu: 2012
Aiheet:
DRNTU::Engineering::Materials
Linkit:https://hdl.handle.net/10356/90576
http://hdl.handle.net/10220/8343

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