Modification of Ta/polymeric low-k interface by electron beam treatment
Polymeric dielectric, porous polyarylene ether (PAE), was introduced in the Cu damascene structures because of its low dielectric constant to reduce resistance-capacitance (RC) delay. One of the requirements of a low-k material includes its good adhesion to the other in...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/90682 http://hdl.handle.net/10220/7701 |
| _version_ | 1811694395124088832 |
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| author | Prasad, K. Damayanti, M. Gan, Zhenghao Mhaisalkar, Subodh Gautam Chen, Zhong Chen, Zhe Zhang, Sam Jiang, Ning |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Prasad, K. Damayanti, M. Gan, Zhenghao Mhaisalkar, Subodh Gautam Chen, Zhong Chen, Zhe Zhang, Sam Jiang, Ning |
| author_sort | Prasad, K. |
| collection | NTU |
| description | Polymeric dielectric, porous polyarylene ether (PAE), was introduced in the Cu damascene structures because of its low dielectric
constant to reduce resistance-capacitance (RC) delay. One of the requirements of a low-k material includes its good adhesion to the
other interconnect materials. In the present study, the adhesion energy (Gc) of the barrier layer Ta/PAE interface was quantitatively
measured by a four-point bending technique. The obtained Gc value of the pristine Ta/PAE interface was 5.9 ± 1.1 J/m2. If the
PAE was subjected to electron-beam (EB) treatment with low dose (20 μC/cm2) prior to Ta deposition, Gc value increased to
8.1 ± 0.5 J/m2. However, with high-dose (40 μC/cm2) EB treatment, Gc value reduced to 4.0 ± 0.6 J/m2. The adhesion improvement
and degradation induced by low- and high-dose EB were correlated to the increase and reduction of the amount of C–Ta
bonds at the Ta/PAE interface, respectively. The phenomena were further studied by X-ray photoelectron spectroscopy analysis. |
| first_indexed | 2024-10-01T07:06:53Z |
| format | Journal Article |
| id | ntu-10356/90682 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:06:53Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/906822023-07-14T15:52:53Z Modification of Ta/polymeric low-k interface by electron beam treatment Prasad, K. Damayanti, M. Gan, Zhenghao Mhaisalkar, Subodh Gautam Chen, Zhong Chen, Zhe Zhang, Sam Jiang, Ning School of Materials Science & Engineering DRNTU::Engineering::Materials Polymeric dielectric, porous polyarylene ether (PAE), was introduced in the Cu damascene structures because of its low dielectric constant to reduce resistance-capacitance (RC) delay. One of the requirements of a low-k material includes its good adhesion to the other interconnect materials. In the present study, the adhesion energy (Gc) of the barrier layer Ta/PAE interface was quantitatively measured by a four-point bending technique. The obtained Gc value of the pristine Ta/PAE interface was 5.9 ± 1.1 J/m2. If the PAE was subjected to electron-beam (EB) treatment with low dose (20 μC/cm2) prior to Ta deposition, Gc value increased to 8.1 ± 0.5 J/m2. However, with high-dose (40 μC/cm2) EB treatment, Gc value reduced to 4.0 ± 0.6 J/m2. The adhesion improvement and degradation induced by low- and high-dose EB were correlated to the increase and reduction of the amount of C–Ta bonds at the Ta/PAE interface, respectively. The phenomena were further studied by X-ray photoelectron spectroscopy analysis. Published version 2012-04-09T08:38:44Z 2019-12-06T17:52:06Z 2012-04-09T08:38:44Z 2019-12-06T17:52:06Z 2006 2006 Journal Article Gan, Z., Mhaisalkar, S. G., Chen, Z., Chen, Z., Prasad, K., Zhang, S., et al. (2006). Modification of Ta/polymeric low-k interface by electron beam treatment. Journal of the electrochemical society, 153. https://hdl.handle.net/10356/90682 http://hdl.handle.net/10220/7701 10.1149/1.2129493 en Journal of the electrochemical society © 2006 The Electrochemical Society. This paper was published in Journal of The Electrochemical Society and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following DOI: http://dx.doi.org/10.1149/1.2129493. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials Prasad, K. Damayanti, M. Gan, Zhenghao Mhaisalkar, Subodh Gautam Chen, Zhong Chen, Zhe Zhang, Sam Jiang, Ning Modification of Ta/polymeric low-k interface by electron beam treatment |
| title | Modification of Ta/polymeric low-k interface by electron beam treatment |
| title_full | Modification of Ta/polymeric low-k interface by electron beam treatment |
| title_fullStr | Modification of Ta/polymeric low-k interface by electron beam treatment |
| title_full_unstemmed | Modification of Ta/polymeric low-k interface by electron beam treatment |
| title_short | Modification of Ta/polymeric low-k interface by electron beam treatment |
| title_sort | modification of ta polymeric low k interface by electron beam treatment |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/90682 http://hdl.handle.net/10220/7701 |
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