16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating
This paper presents two fully integrated CMOS transmit/receive (T/R) switches with improved body-floating operations. The first design exploits an improved transistor layout with asymmetric drain–source region, which reduces the drain–source feed-through for body-floated RF switches. In the s...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2009
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| Online Access: | https://hdl.handle.net/10356/90772 http://hdl.handle.net/10220/5992 |
| _version_ | 1811687702493396992 |
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| author | Li, Qiang Zhang, Yue Ping Yeo, Kiat Seng Lim, Wei Meng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Li, Qiang Zhang, Yue Ping Yeo, Kiat Seng Lim, Wei Meng |
| author_sort | Li, Qiang |
| collection | NTU |
| description | This paper presents two fully integrated CMOS
transmit/receive (T/R) switches with improved body-floating operations. The first design exploits an improved transistor layout with asymmetric drain–source region, which reduces the drain–source feed-through for body-floated RF switches. In the second design, a switched body-floating technique is proposed, which reconfigures the body-floating condition of a switch transistor in the ON and OFF states. Both designs are fabricated in a standard 0.13-µm triple-well CMOS process.With regard to 2-dB insertion loss, the switch with asymmetric drain–source achieves 28-GHz bandwidth, which is among the highest reported frequencies for CMOS T/R switches. The bandwidth of the switched body-floating design is 16.6 GHz. There is approximately 5 dB better isolation obtained in the switched body-floating design. With the resistive double-well body-floating technique, 26.5- and 25.5-dBm input 1-dB compression point (P 1dB) are obtained, respectively. Both designs consume only 150 µm X 100 µm die area. The demonstrated T/R switches are suitable for high-frequency and wideband transceivers. |
| first_indexed | 2024-10-01T05:20:31Z |
| format | Journal Article |
| id | ntu-10356/90772 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:20:31Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/907722020-03-07T14:02:39Z 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating Li, Qiang Zhang, Yue Ping Yeo, Kiat Seng Lim, Wei Meng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper presents two fully integrated CMOS transmit/receive (T/R) switches with improved body-floating operations. The first design exploits an improved transistor layout with asymmetric drain–source region, which reduces the drain–source feed-through for body-floated RF switches. In the second design, a switched body-floating technique is proposed, which reconfigures the body-floating condition of a switch transistor in the ON and OFF states. Both designs are fabricated in a standard 0.13-µm triple-well CMOS process.With regard to 2-dB insertion loss, the switch with asymmetric drain–source achieves 28-GHz bandwidth, which is among the highest reported frequencies for CMOS T/R switches. The bandwidth of the switched body-floating design is 16.6 GHz. There is approximately 5 dB better isolation obtained in the switched body-floating design. With the resistive double-well body-floating technique, 26.5- and 25.5-dBm input 1-dB compression point (P 1dB) are obtained, respectively. Both designs consume only 150 µm X 100 µm die area. The demonstrated T/R switches are suitable for high-frequency and wideband transceivers. Published version 2009-08-03T01:54:58Z 2019-12-06T17:53:44Z 2009-08-03T01:54:58Z 2019-12-06T17:53:44Z 2008 2008 Journal Article Li, Q., Zhang, Y. P., Yeo, K. S., & Lim, W. M. (2008). 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating. IEEE Transactions on Microwave Theory and Techniques, 56(2), 339-345. 0018-9480 https://hdl.handle.net/10356/90772 http://hdl.handle.net/10220/5992 10.1109/TMTT.2007.914364 en IEEE transactions on microwave theory and techniques IEEE Transactions on Microwave Theory and Techniques © 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 7 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Li, Qiang Zhang, Yue Ping Yeo, Kiat Seng Lim, Wei Meng 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating |
| title | 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating |
| title_full | 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating |
| title_fullStr | 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating |
| title_full_unstemmed | 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating |
| title_short | 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating |
| title_sort | 16 6 and 28 ghz fully integrated cmos rf switches with improved body floating |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/90772 http://hdl.handle.net/10220/5992 |
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