Fourier transform-based k∙p method of semiconductor superlattice electronic structure

With the periodic spatial domain Hamiltonian being expressed as a Fourier series, a simple and neat Hamiltonian in a Fourier domain is formulated. The Fourier transform-based k⋅p approach is developed to calculate electronic structures of semiconductor heterostructures. Calculation of electronic str...

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Bibliographic Details
Main Author: Mei, Ting
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2010
Subjects:
Online Access:https://hdl.handle.net/10356/90823
http://hdl.handle.net/10220/6416
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author Mei, Ting
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Mei, Ting
author_sort Mei, Ting
collection NTU
description With the periodic spatial domain Hamiltonian being expressed as a Fourier series, a simple and neat Hamiltonian in a Fourier domain is formulated. The Fourier transform-based k⋅p approach is developed to calculate electronic structures of semiconductor heterostructures. Calculation of electronic structures is investigated with several quantum well examples and comparison is made between this approach and the finite difference approach. The formulation of the Fourier domain Hamiltonian for quantum dots is presented as well.
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spelling ntu-10356/908232020-03-07T14:02:40Z Fourier transform-based k∙p method of semiconductor superlattice electronic structure Mei, Ting School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors With the periodic spatial domain Hamiltonian being expressed as a Fourier series, a simple and neat Hamiltonian in a Fourier domain is formulated. The Fourier transform-based k⋅p approach is developed to calculate electronic structures of semiconductor heterostructures. Calculation of electronic structures is investigated with several quantum well examples and comparison is made between this approach and the finite difference approach. The formulation of the Fourier domain Hamiltonian for quantum dots is presented as well. Published version 2010-09-07T04:17:34Z 2019-12-06T17:54:41Z 2010-09-07T04:17:34Z 2019-12-06T17:54:41Z 2007 2007 Journal Article Mei, T. (2007). Fourier transform-based k∙p method of semiconductor superlattice electronic structure. Journal of Applied Physics, 102, 1-5. 0021-8979 https://hdl.handle.net/10356/90823 http://hdl.handle.net/10220/6416 10.1063/1.2776158 en Journal of applied physics Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v102/i5/p053708_s1?isAuthorized=no 5 p. application/pdf
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Mei, Ting
Fourier transform-based k∙p method of semiconductor superlattice electronic structure
title Fourier transform-based k∙p method of semiconductor superlattice electronic structure
title_full Fourier transform-based k∙p method of semiconductor superlattice electronic structure
title_fullStr Fourier transform-based k∙p method of semiconductor superlattice electronic structure
title_full_unstemmed Fourier transform-based k∙p method of semiconductor superlattice electronic structure
title_short Fourier transform-based k∙p method of semiconductor superlattice electronic structure
title_sort fourier transform based k∙p method of semiconductor superlattice electronic structure
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
url https://hdl.handle.net/10356/90823
http://hdl.handle.net/10220/6416
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