A high-speed twin-capacitor BiNMOS (TC-BiNMOS) logic circuit for single battery operation
This paper presents a novel BiNMOS logic gate specially designed for single battery operation (1.2-1.5 V). Through the use of two capacitors, in the pre-charging and bootstrapping cycles, the circuit achieves a high-speed and full-swing operation. Analytical expressions for the circuit were derived,...
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Format: | Journal Article |
Language: | English |
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2009
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Online Access: | https://hdl.handle.net/10356/90959 http://hdl.handle.net/10220/4560 |
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author | Yeo, Kiat Seng Lee, Heng Kah Do, Manh Anh |
author2 | School of Electrical and Electronic Engineering |
author_facet | School of Electrical and Electronic Engineering Yeo, Kiat Seng Lee, Heng Kah Do, Manh Anh |
author_sort | Yeo, Kiat Seng |
collection | NTU |
description | This paper presents a novel BiNMOS logic gate specially designed for single battery operation (1.2-1.5 V). Through the use of two capacitors, in the pre-charging and bootstrapping cycles, the circuit achieves a high-speed and full-swing operation. Analytical expressions for the circuit were derived, and the main design considerations were addressed. Based on a 0.5 μm BiCMOS technology, HSPICE simulation results have proven the superiority of the new circuit over the CMOS, BFBiNMOS and BSBiNMOS circuits in terms of speed and power consumption. The circuit also occupies the smallest area amongst the BiNMOS families. A 75-stage ring oscillator of the new circuit was fabricated using a 0.8 μm BiCMOS process, and the measured gate delay/stage is merely 1.32 ns at a supply voltage of 1.5 V and a load capacitance of 1 pF. |
first_indexed | 2024-10-01T07:14:24Z |
format | Journal Article |
id | ntu-10356/90959 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T07:14:24Z |
publishDate | 2009 |
record_format | dspace |
spelling | ntu-10356/909592020-03-07T14:02:40Z A high-speed twin-capacitor BiNMOS (TC-BiNMOS) logic circuit for single battery operation Yeo, Kiat Seng Lee, Heng Kah Do, Manh Anh School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits This paper presents a novel BiNMOS logic gate specially designed for single battery operation (1.2-1.5 V). Through the use of two capacitors, in the pre-charging and bootstrapping cycles, the circuit achieves a high-speed and full-swing operation. Analytical expressions for the circuit were derived, and the main design considerations were addressed. Based on a 0.5 μm BiCMOS technology, HSPICE simulation results have proven the superiority of the new circuit over the CMOS, BFBiNMOS and BSBiNMOS circuits in terms of speed and power consumption. The circuit also occupies the smallest area amongst the BiNMOS families. A 75-stage ring oscillator of the new circuit was fabricated using a 0.8 μm BiCMOS process, and the measured gate delay/stage is merely 1.32 ns at a supply voltage of 1.5 V and a load capacitance of 1 pF. Published version 2009-04-17T09:51:13Z 2019-12-06T17:57:09Z 2009-04-17T09:51:13Z 2019-12-06T17:57:09Z 2001 2001 Journal Article Yeo, K. S., Lee, H. K., & Do, M. A. (2001). A high-speed twin-capacitor BiNMOS (TC-BiNMOS) logic circuit for single battery operation. IEEE Transactions on Circuits and Systems, 48(4), 399-405. 1057-7122 https://hdl.handle.net/10356/90959 http://hdl.handle.net/10220/4560 10.1109/81.917977 en IEEE transactions on circuits and systems © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 7 p. application/pdf |
spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Yeo, Kiat Seng Lee, Heng Kah Do, Manh Anh A high-speed twin-capacitor BiNMOS (TC-BiNMOS) logic circuit for single battery operation |
title | A high-speed twin-capacitor BiNMOS (TC-BiNMOS) logic circuit for single battery operation |
title_full | A high-speed twin-capacitor BiNMOS (TC-BiNMOS) logic circuit for single battery operation |
title_fullStr | A high-speed twin-capacitor BiNMOS (TC-BiNMOS) logic circuit for single battery operation |
title_full_unstemmed | A high-speed twin-capacitor BiNMOS (TC-BiNMOS) logic circuit for single battery operation |
title_short | A high-speed twin-capacitor BiNMOS (TC-BiNMOS) logic circuit for single battery operation |
title_sort | high speed twin capacitor binmos tc binmos logic circuit for single battery operation |
topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
url | https://hdl.handle.net/10356/90959 http://hdl.handle.net/10220/4560 |
work_keys_str_mv | AT yeokiatseng ahighspeedtwincapacitorbinmostcbinmoslogiccircuitforsinglebatteryoperation AT leehengkah ahighspeedtwincapacitorbinmostcbinmoslogiccircuitforsinglebatteryoperation AT domanhanh ahighspeedtwincapacitorbinmostcbinmoslogiccircuitforsinglebatteryoperation AT yeokiatseng highspeedtwincapacitorbinmostcbinmoslogiccircuitforsinglebatteryoperation AT leehengkah highspeedtwincapacitorbinmostcbinmoslogiccircuitforsinglebatteryoperation AT domanhanh highspeedtwincapacitorbinmostcbinmoslogiccircuitforsinglebatteryoperation |