A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation
Both isolated Si nanocrystals (nc-Si) dispersedly distributed in a SiO2 matrix and densely stacked nc-Si layers embedded in SiO2 have been synthesized with the ion implantation technique followed by high temperature annealing. The dielect...
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2011
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/91068 http://hdl.handle.net/10220/6938 |
| _version_ | 1826128620792315904 |
|---|---|
| author | Ding, Liang Chen, Tupei Liu, Yang Liu, Yu Chan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ding, Liang Chen, Tupei Liu, Yang Liu, Yu Chan |
| author_sort | Ding, Liang |
| collection | NTU |
| description | Both isolated Si nanocrystals (nc-Si) dispersedly distributed in a SiO2 matrix and densely stacked nc-Si layers embedded
in SiO2 have been synthesized with the ion implantation technique followed by high temperature annealing. The
dielectric functions of the isolated nc-Si and densely-stacked nc-Si layer embedded in SiO2 have been determined with
spectroscopic ellipsometry (SE) in the photon energy range of 1.1-5 eV. The dielectric functions of these two different Si
nanostructures were successfully extracted from the SE fitting based on a multi-layer fitting model that takes into
account the distribution of nc-Si in SiO2 and a five phase model (i.e., air/SiO2 layer/densely-stacked nc-Si layer/SiO2
layer/Si), respectively. The dielectric spectra of isolated nc-Si distributed in SiO2 present a two-peak structure, while the
dielectric spectra of densely-stacked nc-Si layer show a single broad peak, being similar to that of amorphous Si. The
dielectric functions of these two Si nanostructures both show significant suppressions as compared with bulk crystalline
Si. However, it has been observed that the densely stacked nc-Si layer exhibits a more significant suppression in the
dielectric spectra than the isolated nc-Si dispersedly embedded in SiO2. This is probably related to the two factors: (i) the
nc-Si size (~3 nm) of the densely stacked nc-Si layer is smaller than that (~4.5 nm) of the isolated nc-Si embedded in
SiO2 matrix, and (ii) the densely stacked nc-Si layer has an amorphous phase. |
| first_indexed | 2024-10-01T07:27:55Z |
| format | Conference Paper |
| id | ntu-10356/91068 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:27:55Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/910682020-03-07T13:24:46Z A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation Ding, Liang Chen, Tupei Liu, Yang Liu, Yu Chan School of Electrical and Electronic Engineering Silicon photonics III A*STAR SIMTech DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Both isolated Si nanocrystals (nc-Si) dispersedly distributed in a SiO2 matrix and densely stacked nc-Si layers embedded in SiO2 have been synthesized with the ion implantation technique followed by high temperature annealing. The dielectric functions of the isolated nc-Si and densely-stacked nc-Si layer embedded in SiO2 have been determined with spectroscopic ellipsometry (SE) in the photon energy range of 1.1-5 eV. The dielectric functions of these two different Si nanostructures were successfully extracted from the SE fitting based on a multi-layer fitting model that takes into account the distribution of nc-Si in SiO2 and a five phase model (i.e., air/SiO2 layer/densely-stacked nc-Si layer/SiO2 layer/Si), respectively. The dielectric spectra of isolated nc-Si distributed in SiO2 present a two-peak structure, while the dielectric spectra of densely-stacked nc-Si layer show a single broad peak, being similar to that of amorphous Si. The dielectric functions of these two Si nanostructures both show significant suppressions as compared with bulk crystalline Si. However, it has been observed that the densely stacked nc-Si layer exhibits a more significant suppression in the dielectric spectra than the isolated nc-Si dispersedly embedded in SiO2. This is probably related to the two factors: (i) the nc-Si size (~3 nm) of the densely stacked nc-Si layer is smaller than that (~4.5 nm) of the isolated nc-Si embedded in SiO2 matrix, and (ii) the densely stacked nc-Si layer has an amorphous phase. Published version 2011-07-28T00:55:38Z 2019-12-06T17:59:08Z 2011-07-28T00:55:38Z 2019-12-06T17:59:08Z 2008 2008 Conference Paper Ding, L., Chen, T., Liu, Y., & Liu, Y. C. (2008). A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation. Silicon photonics III. https://hdl.handle.net/10356/91068 http://hdl.handle.net/10220/6938 10.1117/12.762600 en © 2008 SPIE--The International Society for Optical Engineering. This paper was published in Proc. SPIE 6898 and is made available as an electronic reprint (preprint) with permission of SPIE--The International Society for Optical Engineering. The paper can be found at the following official DOI: http://dx.doi.org/10.1117/12.762600. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 6 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Ding, Liang Chen, Tupei Liu, Yang Liu, Yu Chan A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation |
| title | A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation |
| title_full | A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation |
| title_fullStr | A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation |
| title_full_unstemmed | A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation |
| title_short | A comparative study on the dielectric functions of isolated Si nanocrystals and densely-stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation |
| title_sort | comparative study on the dielectric functions of isolated si nanocrystals and densely stacked si nanocrystal layer embedded in sio2 synthesized with si ion implantation |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/91068 http://hdl.handle.net/10220/6938 |
| work_keys_str_mv | AT dingliang acomparativestudyonthedielectricfunctionsofisolatedsinanocrystalsanddenselystackedsinanocrystallayerembeddedinsio2synthesizedwithsiionimplantation AT chentupei acomparativestudyonthedielectricfunctionsofisolatedsinanocrystalsanddenselystackedsinanocrystallayerembeddedinsio2synthesizedwithsiionimplantation AT liuyang acomparativestudyonthedielectricfunctionsofisolatedsinanocrystalsanddenselystackedsinanocrystallayerembeddedinsio2synthesizedwithsiionimplantation AT liuyuchan acomparativestudyonthedielectricfunctionsofisolatedsinanocrystalsanddenselystackedsinanocrystallayerembeddedinsio2synthesizedwithsiionimplantation AT dingliang comparativestudyonthedielectricfunctionsofisolatedsinanocrystalsanddenselystackedsinanocrystallayerembeddedinsio2synthesizedwithsiionimplantation AT chentupei comparativestudyonthedielectricfunctionsofisolatedsinanocrystalsanddenselystackedsinanocrystallayerembeddedinsio2synthesizedwithsiionimplantation AT liuyang comparativestudyonthedielectricfunctionsofisolatedsinanocrystalsanddenselystackedsinanocrystallayerembeddedinsio2synthesizedwithsiionimplantation AT liuyuchan comparativestudyonthedielectricfunctionsofisolatedsinanocrystalsanddenselystackedsinanocrystallayerembeddedinsio2synthesizedwithsiionimplantation |