Optical properties of silicon nanocrystals embedded in a SiO2 matrix
Optical properties of isolated silicon nanocrystals (nc-Si) with a mean size of ∼4 nm embedded in a SiO2 matrix that was synthesized with an ion beam technique have been determined with spectroscopic ellipsometry in the photon energy range of 1.1–5.0 eV. The optical properties of the nc-Si are foun...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/91319 http://hdl.handle.net/10220/6358 |
| _version_ | 1826127336321318912 |
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| author | Ding, Liang Chen, Tupei Liu, Yang Ng, Chi Yung Fung, Stevenson Hon Yuen |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ding, Liang Chen, Tupei Liu, Yang Ng, Chi Yung Fung, Stevenson Hon Yuen |
| author_sort | Ding, Liang |
| collection | NTU |
| description | Optical properties of isolated silicon nanocrystals (nc-Si) with a mean size of ∼4 nm embedded in a SiO2 matrix that was synthesized with an ion beam technique have been determined with spectroscopic ellipsometry in the photon energy range of 1.1–5.0 eV. The optical properties of the nc-Si are found to be well described by both the Lorentz oscillator model and the Forouhi-Bloomer (FB) model. The nc-Si exhibits a significant reduction in the dielectric functions and optical constants and a large blueshift (∼0.6 eV) in the absorption spectrum as compared with bulk crystalline silicon. The band gap of the nc-Si obtained from the FB model is ∼1.7 eV, showing a large band gap expansion of ∼0.6 eV relative to the bulk value. The band gap expansion is in very good agreement with the first-principles calculation of the nc-Si optical gap based on quantum confinement. |
| first_indexed | 2024-10-01T07:06:53Z |
| format | Journal Article |
| id | ntu-10356/91319 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:06:53Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/913192020-03-07T14:02:39Z Optical properties of silicon nanocrystals embedded in a SiO2 matrix Ding, Liang Chen, Tupei Liu, Yang Ng, Chi Yung Fung, Stevenson Hon Yuen School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Optical properties of isolated silicon nanocrystals (nc-Si) with a mean size of ∼4 nm embedded in a SiO2 matrix that was synthesized with an ion beam technique have been determined with spectroscopic ellipsometry in the photon energy range of 1.1–5.0 eV. The optical properties of the nc-Si are found to be well described by both the Lorentz oscillator model and the Forouhi-Bloomer (FB) model. The nc-Si exhibits a significant reduction in the dielectric functions and optical constants and a large blueshift (∼0.6 eV) in the absorption spectrum as compared with bulk crystalline silicon. The band gap of the nc-Si obtained from the FB model is ∼1.7 eV, showing a large band gap expansion of ∼0.6 eV relative to the bulk value. The band gap expansion is in very good agreement with the first-principles calculation of the nc-Si optical gap based on quantum confinement. Published version 2010-08-30T01:56:36Z 2019-12-06T18:03:33Z 2010-08-30T01:56:36Z 2019-12-06T18:03:33Z 2005 2005 Journal Article Ding, L., Chen, T. P., Liu, Y., Ng, C. Y., & Fung, S. H. Y. (2005). Optical properties of silicon nanocrystals embedded in a SiO2 matrix. Physical Review B 72, 1-7. 1098-0121 https://hdl.handle.net/10356/91319 http://hdl.handle.net/10220/6358 10.1103/PhysRevB.72.125419 en Physical review B Physical Review B © copyright 2005 American Physical Society. The journal's website is located at http://link.aps.org/doi/10.1103/PhysRevB.72.125419 7 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Ding, Liang Chen, Tupei Liu, Yang Ng, Chi Yung Fung, Stevenson Hon Yuen Optical properties of silicon nanocrystals embedded in a SiO2 matrix |
| title | Optical properties of silicon nanocrystals embedded in a SiO2 matrix |
| title_full | Optical properties of silicon nanocrystals embedded in a SiO2 matrix |
| title_fullStr | Optical properties of silicon nanocrystals embedded in a SiO2 matrix |
| title_full_unstemmed | Optical properties of silicon nanocrystals embedded in a SiO2 matrix |
| title_short | Optical properties of silicon nanocrystals embedded in a SiO2 matrix |
| title_sort | optical properties of silicon nanocrystals embedded in a sio2 matrix |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | https://hdl.handle.net/10356/91319 http://hdl.handle.net/10220/6358 |
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