A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure
A temperature-dependent analytical model for deep submicrometer LDD p-channel devices operating in a Bi-MOS structure is reported for the first time. This model is based on experimental data obtained from 0.25-µm process wafers with a wide range of technologies (0.25–1.0µm). The measurements have be...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2009
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| Online Access: | https://hdl.handle.net/10356/91614 http://hdl.handle.net/10220/4664 |
| _version_ | 1826117268860305408 |
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| author | Rofail, Samir S. Chew, Kok Wai Johnny Yeo, Kiat Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Rofail, Samir S. Chew, Kok Wai Johnny Yeo, Kiat Seng |
| author_sort | Rofail, Samir S. |
| collection | NTU |
| description | A temperature-dependent analytical model for deep submicrometer LDD p-channel devices operating in a Bi-MOS structure is reported for the first time. This model is based on experimental data obtained from 0.25-µm process wafers with a wide range of technologies (0.25–1.0µm). The measurements have been performed within the temperature range 223–398 K (50C to +125C). The model accounts for the effects of independently biasing the source, drain, gate and body potentials, scaling, and the influence of temperature on the threshold voltage and the device currents. The effect of temperature on the device transconductance and the output conductance have also been examined. The results revealed that close agreement between the analytical model and the experimental has been achieved. Comparisons between the principal MOS current and the lateral bipolar current have been made to demonstrate the improvement of the latter with temperature for the quarter-micron devices. |
| first_indexed | 2024-10-01T04:24:51Z |
| format | Journal Article |
| id | ntu-10356/91614 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:24:51Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/916142020-03-07T14:02:41Z A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure Rofail, Samir S. Chew, Kok Wai Johnny Yeo, Kiat Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering A temperature-dependent analytical model for deep submicrometer LDD p-channel devices operating in a Bi-MOS structure is reported for the first time. This model is based on experimental data obtained from 0.25-µm process wafers with a wide range of technologies (0.25–1.0µm). The measurements have been performed within the temperature range 223–398 K (50C to +125C). The model accounts for the effects of independently biasing the source, drain, gate and body potentials, scaling, and the influence of temperature on the threshold voltage and the device currents. The effect of temperature on the device transconductance and the output conductance have also been examined. The results revealed that close agreement between the analytical model and the experimental has been achieved. Comparisons between the principal MOS current and the lateral bipolar current have been made to demonstrate the improvement of the latter with temperature for the quarter-micron devices. Published version 2009-06-23T06:49:23Z 2019-12-06T18:08:57Z 2009-06-23T06:49:23Z 2019-12-06T18:08:57Z 1999 1999 Journal Article Chew, K. W. J., Rofail, S. S., & Yeo, K. S. (1999). A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure. IEEE Transactions on Electron Devices, 46(8), 1672-1684. 0018-9383 https://hdl.handle.net/10356/91614 http://hdl.handle.net/10220/4664 10.1109/16.777156 en IEEE transactions on electron devices © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 13 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Rofail, Samir S. Chew, Kok Wai Johnny Yeo, Kiat Seng A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure |
| title | A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure |
| title_full | A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure |
| title_fullStr | A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure |
| title_full_unstemmed | A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure |
| title_short | A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure |
| title_sort | temperature dependent dc model for quarter micron ldd pmosfet s operating in a bi mos structure |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/91614 http://hdl.handle.net/10220/4664 |
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