A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure
A temperature-dependent analytical model for deep submicrometer LDD p-channel devices operating in a Bi-MOS structure is reported for the first time. This model is based on experimental data obtained from 0.25-µm process wafers with a wide range of technologies (0.25–1.0µm). The measurements have be...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/91614 http://hdl.handle.net/10220/4664 |