Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model
We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and n...
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| Format: | Journal Article |
| Language: | English |
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2009
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| Online Access: | https://hdl.handle.net/10356/91711 http://hdl.handle.net/10220/6058 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=23&spage=231112&epage=&aulast=Qiu&aufirst=%20Y%20%20N&auinit=&title=Applied%20Physics%20Letters&atitle=Influence%20of%20composition%20diffusion%20on%20the%20band%20structures%20of%20InGaNAs%2FGaAs%20quantum%20wells%20investigated%20by%20the%20band%2Danticrossing%20model%2E&sici. |
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| author | Qiu, Y. N. Rorison, J. M. Sun, Handong Calvez, Stephane Dawson, M. D. Bryce, A. C. |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Qiu, Y. N. Rorison, J. M. Sun, Handong Calvez, Stephane Dawson, M. D. Bryce, A. C. |
| author_sort | Qiu, Y. N. |
| collection | NTU |
| description | We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers. |
| first_indexed | 2024-10-01T07:03:50Z |
| format | Journal Article |
| id | ntu-10356/91711 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:03:50Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/917112023-02-28T19:24:24Z Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model Qiu, Y. N. Rorison, J. M. Sun, Handong Calvez, Stephane Dawson, M. D. Bryce, A. C. School of Physical and Mathematical Sciences DRNTU::Science::Physics::Optics and light We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers. Published version 2009-08-12T03:26:32Z 2019-12-06T18:10:36Z 2009-08-12T03:26:32Z 2019-12-06T18:10:36Z 2005 2005 Journal Article Qiu, Y. N., Rorison, J. M., Sun, H. D., Calvez, S, Dawson, M. D., & Bryce A. C. (2005). Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model. Applied Physics Letters, 87(23), 1-3. 0003-6951 https://hdl.handle.net/10356/91711 http://hdl.handle.net/10220/6058 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=23&spage=231112&epage=&aulast=Qiu&aufirst=%20Y%20%20N&auinit=&title=Applied%20Physics%20Letters&atitle=Influence%20of%20composition%20diffusion%20on%20the%20band%20structures%20of%20InGaNAs%2FGaAs%20quantum%20wells%20investigated%20by%20the%20band%2Danticrossing%20model%2E&sici. 10.1063/1.2138350 en Applied physics letters Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/. 3 p. application/pdf |
| spellingShingle | DRNTU::Science::Physics::Optics and light Qiu, Y. N. Rorison, J. M. Sun, Handong Calvez, Stephane Dawson, M. D. Bryce, A. C. Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model |
| title | Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model |
| title_full | Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model |
| title_fullStr | Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model |
| title_full_unstemmed | Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model |
| title_short | Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model |
| title_sort | influence of composition diffusion on the band structures of inganas gaas quantum wells investigated by the band anticrossing model |
| topic | DRNTU::Science::Physics::Optics and light |
| url | https://hdl.handle.net/10356/91711 http://hdl.handle.net/10220/6058 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=23&spage=231112&epage=&aulast=Qiu&aufirst=%20Y%20%20N&auinit=&title=Applied%20Physics%20Letters&atitle=Influence%20of%20composition%20diffusion%20on%20the%20band%20structures%20of%20InGaNAs%2FGaAs%20quantum%20wells%20investigated%20by%20the%20band%2Danticrossing%20model%2E&sici. |
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