Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such fiel...
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| Format: | Journal Article |
| Language: | English |
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2011
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| Online Access: | https://hdl.handle.net/10356/91737 http://hdl.handle.net/10220/6860 |
| _version_ | 1826114995102941184 |
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| author | Yuan, Guoliang Wang, Junling |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Yuan, Guoliang Wang, Junling |
| author_sort | Yuan, Guoliang |
| collection | NTU |
| description | Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current. |
| first_indexed | 2024-10-01T03:48:18Z |
| format | Journal Article |
| id | ntu-10356/91737 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:48:18Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/917372023-07-14T15:49:07Z Evidences for the depletion region induced by the polarization of ferroelectric semiconductors Yuan, Guoliang Wang, Junling School of Materials Science & Engineering DRNTU::Engineering::Materials::Magnetic materials Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current. Published version 2011-07-05T08:54:46Z 2019-12-06T18:11:05Z 2011-07-05T08:54:46Z 2019-12-06T18:11:05Z 2009 2009 Journal Article Yuan, G. L., & Wang, J. (2009). Evidences for the depletion region induced by the polarization of ferroelectric semiconductors. Applied Physics Letters, 95. https://hdl.handle.net/10356/91737 http://hdl.handle.net/10220/6860 10.1063/1.3268783 en Applied physics letters © 2009 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.3268783. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Magnetic materials Yuan, Guoliang Wang, Junling Evidences for the depletion region induced by the polarization of ferroelectric semiconductors |
| title | Evidences for the depletion region induced by the polarization of ferroelectric semiconductors |
| title_full | Evidences for the depletion region induced by the polarization of ferroelectric semiconductors |
| title_fullStr | Evidences for the depletion region induced by the polarization of ferroelectric semiconductors |
| title_full_unstemmed | Evidences for the depletion region induced by the polarization of ferroelectric semiconductors |
| title_short | Evidences for the depletion region induced by the polarization of ferroelectric semiconductors |
| title_sort | evidences for the depletion region induced by the polarization of ferroelectric semiconductors |
| topic | DRNTU::Engineering::Materials::Magnetic materials |
| url | https://hdl.handle.net/10356/91737 http://hdl.handle.net/10220/6860 |
| work_keys_str_mv | AT yuanguoliang evidencesforthedepletionregioninducedbythepolarizationofferroelectricsemiconductors AT wangjunling evidencesforthedepletionregioninducedbythepolarizationofferroelectricsemiconductors |