Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy

We report on the comparative electronic state characteristics of particular GalnNAs/GaAs quantum well structures that emit near 1.3 and 1.5 μm wavelength at room temperature. While the electronic structure of the 1.3 μm sample is consistent with a standard quantum well, the 1.5 μm sample demonstrate...

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Main Authors: Sun, Handong, Clark, Antony H., Calvez, Stephane, Dawson, M. D., Gilet, P., Grenouillet, L., Million, A.
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/91750
http://hdl.handle.net/10220/6050
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rft.object_id=954922836225&sfx.request_id=787993&sfx.ctx_obj_item=0.
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author Sun, Handong
Clark, Antony H.
Calvez, Stephane
Dawson, M. D.
Gilet, P.
Grenouillet, L.
Million, A.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Sun, Handong
Clark, Antony H.
Calvez, Stephane
Dawson, M. D.
Gilet, P.
Grenouillet, L.
Million, A.
author_sort Sun, Handong
collection NTU
description We report on the comparative electronic state characteristics of particular GalnNAs/GaAs quantum well structures that emit near 1.3 and 1.5 μm wavelength at room temperature. While the electronic structure of the 1.3 μm sample is consistent with a standard quantum well, the 1.5 μm sample demonstrate quite different characteristics. By using photoluminescence (PL) excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 μm structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 μm emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range.
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spelling ntu-10356/917502023-02-28T19:28:54Z Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Gilet, P. Grenouillet, L. Million, A. School of Physical and Mathematical Sciences DRNTU::Science::Physics::Optics and light We report on the comparative electronic state characteristics of particular GalnNAs/GaAs quantum well structures that emit near 1.3 and 1.5 μm wavelength at room temperature. While the electronic structure of the 1.3 μm sample is consistent with a standard quantum well, the 1.5 μm sample demonstrate quite different characteristics. By using photoluminescence (PL) excitation spectroscopy at various detection wavelengths, we demonstrate that the macroscopic electronic states in the 1.5 μm structures originate from phase-separated quantum dots instead of quantum wells. PL measurements with spectrally selective excitation provide further evidence for the existence of composition-separated phases. The evidence is consistent with phase segregation during the growth leading to two phases, one with high In and N content which accounts for the efficient low energy 1.5 μm emission, and the other one having lower In and N content which contributes metastable states and only emits under excitation in a particular wavelength range. Published version 2009-08-12T02:24:54Z 2019-12-06T18:11:19Z 2009-08-12T02:24:54Z 2019-12-06T18:11:19Z 2005 2005 Journal Article Sun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Gilet, P., Grenouillet, L., et al. (2005). Investigation of phase-separated electronic states in 1.5 mm GaInNAs/GaAs heterostructures by optical spectroscopy. Journal of Applied Physics, 97(3). 0021-8979 https://hdl.handle.net/10356/91750 http://hdl.handle.net/10220/6050 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rft.object_id=954922836225&sfx.request_id=787993&sfx.ctx_obj_item=0. 10.1063/1.1836856. en Journal of applied physics Journal of Applied Physics © copyright 2005 American Institute of Physics. The journal's website is located at http://jap.aip.org/. 5 p. application/pdf
spellingShingle DRNTU::Science::Physics::Optics and light
Sun, Handong
Clark, Antony H.
Calvez, Stephane
Dawson, M. D.
Gilet, P.
Grenouillet, L.
Million, A.
Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy
title Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy
title_full Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy
title_fullStr Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy
title_full_unstemmed Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy
title_short Investigation of phase-separated electronic states in 1.5 µm GaInNAs/GaAs heterostructures by optical spectroscopy
title_sort investigation of phase separated electronic states in 1 5 µm gainnas gaas heterostructures by optical spectroscopy
topic DRNTU::Science::Physics::Optics and light
url https://hdl.handle.net/10356/91750
http://hdl.handle.net/10220/6050
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rft.object_id=954922836225&sfx.request_id=787993&sfx.ctx_obj_item=0.
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