Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation
Si nanocrystals (nc-Si) with different sizes embedded in SiO2 matrix have been synthesized with various recipes of Si ion implantation. The influence of nanocrystal size on optical properties, including dielectric functions and optical constants, of the nc-Si has been investigated with spectroscopic...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2010
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| Online Access: | https://hdl.handle.net/10356/91752 http://hdl.handle.net/10220/6399 |
| _version_ | 1826116669366337536 |
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| author | Tan, M. C. Ding, Liang Fung, Stevenson Hon Yuen Liu, Yu Chan Zhu, Fu Rong Chen, Tupei Liu, Yang Yang, Ming Wong, Jen It Trigg, Alastair David |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tan, M. C. Ding, Liang Fung, Stevenson Hon Yuen Liu, Yu Chan Zhu, Fu Rong Chen, Tupei Liu, Yang Yang, Ming Wong, Jen It Trigg, Alastair David |
| author_sort | Tan, M. C. |
| collection | NTU |
| description | Si nanocrystals (nc-Si) with different sizes embedded in SiO2 matrix have been synthesized with various recipes of Si ion implantation. The influence of nanocrystal size on optical properties, including dielectric functions and optical constants, of the nc-Si has been investigated with spectroscopic ellipsometry. The optical properties of the nc-Si are found to be well described by the four-term Forouhi-Bloomer model. A strong dependence of the dielectric functions and optical constants on the nc-Si size is observed. For the imaginary part of the dielectric functions, the magnitude of the main peaks at the transition energies E1 and E2 exhibits a large reduction and a significant redshift in E2 depending on the nc-Si size. A band gap expansion is observed when the nc-Si size is reduced. The band gap expansion with the reduction of nc-Si size is in good agreement with the prediction of first-principles calculations based on quantum confinement. |
| first_indexed | 2024-10-01T04:15:03Z |
| format | Journal Article |
| id | ntu-10356/91752 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:15:03Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/917522020-03-07T13:57:21Z Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation Tan, M. C. Ding, Liang Fung, Stevenson Hon Yuen Liu, Yu Chan Zhu, Fu Rong Chen, Tupei Liu, Yang Yang, Ming Wong, Jen It Trigg, Alastair David School of Electrical and Electronic Engineering A*STAR Institute of Materials Research and Engineering A*STAR Institute of Microelectronics A*STAR SIMTech DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Si nanocrystals (nc-Si) with different sizes embedded in SiO2 matrix have been synthesized with various recipes of Si ion implantation. The influence of nanocrystal size on optical properties, including dielectric functions and optical constants, of the nc-Si has been investigated with spectroscopic ellipsometry. The optical properties of the nc-Si are found to be well described by the four-term Forouhi-Bloomer model. A strong dependence of the dielectric functions and optical constants on the nc-Si size is observed. For the imaginary part of the dielectric functions, the magnitude of the main peaks at the transition energies E1 and E2 exhibits a large reduction and a significant redshift in E2 depending on the nc-Si size. A band gap expansion is observed when the nc-Si size is reduced. The band gap expansion with the reduction of nc-Si size is in good agreement with the prediction of first-principles calculations based on quantum confinement. Published version 2010-09-03T08:22:24Z 2019-12-06T18:11:21Z 2010-09-03T08:22:24Z 2019-12-06T18:11:21Z 2007 2007 Journal Article Tan, M. C., Ding, L., Chen, T, P., Liu, Y., Yang, M., Wong, J. I., et al. (2007). Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation. Journal of Applied Physics, 101, 1-6. 0021-8979 https://hdl.handle.net/10356/91752 http://hdl.handle.net/10220/6399 10.1063/1.2730560 en Journal of applied physics Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i10/p103525_s1?isAuthorized=no 6 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Tan, M. C. Ding, Liang Fung, Stevenson Hon Yuen Liu, Yu Chan Zhu, Fu Rong Chen, Tupei Liu, Yang Yang, Ming Wong, Jen It Trigg, Alastair David Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation |
| title | Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation |
| title_full | Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation |
| title_fullStr | Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation |
| title_full_unstemmed | Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation |
| title_short | Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation |
| title_sort | influence of nanocrystal size on optical properties of si nanocrystals embedded in sio2 synthesized by si ion implantation |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/91752 http://hdl.handle.net/10220/6399 |
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