Quantum well intermixing in GaInNAs/GaAs structures
We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to t...
| Main Authors: | , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2009
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| Online Access: | https://hdl.handle.net/10356/91816 http://hdl.handle.net/10220/6062 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=12&spage=7581&epage=7585&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Quantum%20well%20intermixing%20in%20GaInNAs%2FGaAs%20structures%2E&sici. |
| _version_ | 1811683429632180224 |
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| author | Sun, Handong Macaluso, Roberto Calvez, Stephane Dawson, M. D. Robert, F. Bryce, A. C. Marsh, J. H. Gilet, P. Grenouillet, L. Million, A. Nam, K. B. Lin, J. Y. Jiang, H. X. |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Sun, Handong Macaluso, Roberto Calvez, Stephane Dawson, M. D. Robert, F. Bryce, A. C. Marsh, J. H. Gilet, P. Grenouillet, L. Million, A. Nam, K. B. Lin, J. Y. Jiang, H. X. |
| author_sort | Sun, Handong |
| collection | NTU |
| description | We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. |
| first_indexed | 2024-10-01T04:12:36Z |
| format | Journal Article |
| id | ntu-10356/91816 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:12:36Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/918162023-02-28T19:31:43Z Quantum well intermixing in GaInNAs/GaAs structures Sun, Handong Macaluso, Roberto Calvez, Stephane Dawson, M. D. Robert, F. Bryce, A. C. Marsh, J. H. Gilet, P. Grenouillet, L. Million, A. Nam, K. B. Lin, J. Y. Jiang, H. X. School of Physical and Mathematical Sciences DRNTU::Science::Physics::Optics and light We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. Published version 2009-08-12T03:48:08Z 2019-12-06T18:12:24Z 2009-08-12T03:48:08Z 2019-12-06T18:12:24Z 2003 2003 Journal Article Sun, H. D., Macaluso, R., Calvez, S., Dawson, M. D., Robert, F., Bryce, A. C., et al. (2003). Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics, 94(12), 7581-7585. 0021-8979 https://hdl.handle.net/10356/91816 http://hdl.handle.net/10220/6062 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=12&spage=7581&epage=7585&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Quantum%20well%20intermixing%20in%20GaInNAs%2FGaAs%20structures%2E&sici. 10.1063/1.1627950 en Journal of Applied Physics. Journal of Applied Physics © copyright 2003 American Institute of Physics. The journal's website is located at http://jap.aip.org/. 5 p. application/pdf |
| spellingShingle | DRNTU::Science::Physics::Optics and light Sun, Handong Macaluso, Roberto Calvez, Stephane Dawson, M. D. Robert, F. Bryce, A. C. Marsh, J. H. Gilet, P. Grenouillet, L. Million, A. Nam, K. B. Lin, J. Y. Jiang, H. X. Quantum well intermixing in GaInNAs/GaAs structures |
| title | Quantum well intermixing in GaInNAs/GaAs structures |
| title_full | Quantum well intermixing in GaInNAs/GaAs structures |
| title_fullStr | Quantum well intermixing in GaInNAs/GaAs structures |
| title_full_unstemmed | Quantum well intermixing in GaInNAs/GaAs structures |
| title_short | Quantum well intermixing in GaInNAs/GaAs structures |
| title_sort | quantum well intermixing in gainnas gaas structures |
| topic | DRNTU::Science::Physics::Optics and light |
| url | https://hdl.handle.net/10356/91816 http://hdl.handle.net/10220/6062 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=12&spage=7581&epage=7585&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Quantum%20well%20intermixing%20in%20GaInNAs%2FGaAs%20structures%2E&sici. |
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