Quantum well intermixing in GaInNAs/GaAs structures

Quantum well intermixing in GaInNAs/GaAs structures

We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to t...

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Bibliographic Details
Main Authors: Sun, Handong, Macaluso, Roberto, Calvez, Stephane, Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., Gilet, P., Grenouillet, L., Million, A., Nam, K. B., Lin, J. Y., Jiang, H. X.
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2009
Subjects:
DRNTU::Science::Physics::Optics and light
Online Access:https://hdl.handle.net/10356/91816
http://hdl.handle.net/10220/6062
http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=12&spage=7581&epage=7585&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Quantum%20well%20intermixing%20in%20GaInNAs%2FGaAs%20structures%2E&sici.

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