Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy
We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 mu m GaInNAs/GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs/GaAs quantum wells can...
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Format: | Journal Article |
Language: | English |
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2009
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Online Access: | https://hdl.handle.net/10356/91818 http://hdl.handle.net/10220/6045 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=2&spage=021903&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Effect%20of%20multilayer%20barriers%20on%20the%20optical%20properties%20of%20GaInNAs%20single%20quantum%2Dwell%20structures%20grown%20by%20metalorganic%20vapor%20phase%20epitaxy%2E&sici. |
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author | Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Kim, K. S. Kim, T. Park, Y. J. |
author2 | School of Physical and Mathematical Sciences |
author_facet | School of Physical and Mathematical Sciences Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Kim, K. S. Kim, T. Park, Y. J. |
author_sort | Sun, Handong |
collection | NTU |
description | We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 mu m GaInNAs/GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs/GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well/barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs/GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics. (c) 2005 American Institute of Physics. |
first_indexed | 2024-10-01T02:48:38Z |
format | Journal Article |
id | ntu-10356/91818 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T02:48:38Z |
publishDate | 2009 |
record_format | dspace |
spelling | ntu-10356/918182023-02-28T19:31:44Z Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Kim, K. S. Kim, T. Park, Y. J. School of Physical and Mathematical Sciences DRNTU::Science::Physics::Optics and light We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 mu m GaInNAs/GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs/GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well/barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs/GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics. (c) 2005 American Institute of Physics. Published version 2009-08-12T01:23:19Z 2019-12-06T18:12:27Z 2009-08-12T01:23:19Z 2019-12-06T18:12:27Z 2005 2005 Journal Article Sun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Kim, K. S., Kim, T., et al. (2005). Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 87(2). 0003-6951 https://hdl.handle.net/10356/91818 http://hdl.handle.net/10220/6045 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=2&spage=021903&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Effect%20of%20multilayer%20barriers%20on%20the%20optical%20properties%20of%20GaInNAs%20single%20quantum%2Dwell%20structures%20grown%20by%20metalorganic%20vapor%20phase%20epitaxy%2E&sici. 10.1063/1.1993758. en Applied physics letters Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/. 3 p. application/pdf |
spellingShingle | DRNTU::Science::Physics::Optics and light Sun, Handong Clark, Antony H. Calvez, Stephane Dawson, M. D. Kim, K. S. Kim, T. Park, Y. J. Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy |
title | Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy |
title_full | Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy |
title_fullStr | Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy |
title_full_unstemmed | Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy |
title_short | Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy |
title_sort | effect of multi layer barriers on the optical properties of gainnas single quantum well structures grown by metal organic vapor phase epitaxy |
topic | DRNTU::Science::Physics::Optics and light |
url | https://hdl.handle.net/10356/91818 http://hdl.handle.net/10220/6045 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=2&spage=021903&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Effect%20of%20multilayer%20barriers%20on%20the%20optical%20properties%20of%20GaInNAs%20single%20quantum%2Dwell%20structures%20grown%20by%20metalorganic%20vapor%20phase%20epitaxy%2E&sici. |
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