Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures
Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditi...
| Main Authors: | , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2009
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| Online Access: | https://hdl.handle.net/10356/91819 http://hdl.handle.net/10220/6063 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=3&spage=1550&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Characterization%20of%20selective%20quantum%20well%20intermixing%20in%201%2E3%20%26mu%3Bm%20GaInNAs%2FGaAs%20structures%2E&sici. |
| _version_ | 1811682779288567808 |
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| author | Sun, Handong Macaluso, Roberto Dawson, M. D. Robert, F. Bryce, A. C. Marsh, J. H. Riechert, H. |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Sun, Handong Macaluso, Roberto Dawson, M. D. Robert, F. Bryce, A. C. Marsh, J. H. Riechert, H. |
| author_sort | Sun, Handong |
| collection | NTU |
| description | Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditions, a shift in band gap of over 170 meV has been obtained in sputtered SiO2-capped samples, while uncapped and plasma enhanced chemical vapor deposited SiO2-capped samples demonstrated a negligible shift. Quantum well intermixing in sputtered SiO2-capped samples originates from enhanced compositional interdiffusion due to the generation of point defects by ion bombardment during the sputtering process. Secondary ion mass spectrometry has confirmed that the enhanced blueshift was caused by the interdiffusion of group III atoms (In and Ga) between the quantum wells and barriers. Detailed photoluminescence and excitation spectroscopy were performed to study the optical properties of both intermixed and nonintermixed samples. |
| first_indexed | 2024-10-01T04:02:16Z |
| format | Journal Article |
| id | ntu-10356/91819 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:02:16Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/918192023-02-28T19:31:48Z Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures Sun, Handong Macaluso, Roberto Dawson, M. D. Robert, F. Bryce, A. C. Marsh, J. H. Riechert, H. School of Physical and Mathematical Sciences DRNTU::Science::Physics::Optics and light Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditions, a shift in band gap of over 170 meV has been obtained in sputtered SiO2-capped samples, while uncapped and plasma enhanced chemical vapor deposited SiO2-capped samples demonstrated a negligible shift. Quantum well intermixing in sputtered SiO2-capped samples originates from enhanced compositional interdiffusion due to the generation of point defects by ion bombardment during the sputtering process. Secondary ion mass spectrometry has confirmed that the enhanced blueshift was caused by the interdiffusion of group III atoms (In and Ga) between the quantum wells and barriers. Detailed photoluminescence and excitation spectroscopy were performed to study the optical properties of both intermixed and nonintermixed samples. Published version 2009-08-12T03:52:32Z 2019-12-06T18:12:29Z 2009-08-12T03:52:32Z 2019-12-06T18:12:29Z 2003 2003 Journal Article Sun, H.D., Macaluso, R., Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., et al. (2003). Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures. Journal of Applied Physics, 94(3), 1550-1556. 0021-8979 https://hdl.handle.net/10356/91819 http://hdl.handle.net/10220/6063 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=3&spage=1550&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Characterization%20of%20selective%20quantum%20well%20intermixing%20in%201%2E3%20%26mu%3Bm%20GaInNAs%2FGaAs%20structures%2E&sici. 10.1063/1.1590413 en Journal of applied physics Journal of Applied Physics © copyright 2003 American Institute of Physics. The journal's website is located at http://jap.aip.org/. 7 p. application/pdf |
| spellingShingle | DRNTU::Science::Physics::Optics and light Sun, Handong Macaluso, Roberto Dawson, M. D. Robert, F. Bryce, A. C. Marsh, J. H. Riechert, H. Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures |
| title | Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures |
| title_full | Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures |
| title_fullStr | Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures |
| title_full_unstemmed | Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures |
| title_short | Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures |
| title_sort | characterization of selective quantum well intermixing in 1 3 mu m gainnas gaas structures |
| topic | DRNTU::Science::Physics::Optics and light |
| url | https://hdl.handle.net/10356/91819 http://hdl.handle.net/10220/6063 http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=3&spage=1550&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Characterization%20of%20selective%20quantum%20well%20intermixing%20in%201%2E3%20%26mu%3Bm%20GaInNAs%2FGaAs%20structures%2E&sici. |
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