Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals

Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals

Al nanocrystals (nc-Al) embedded in AlN thin films have been synthesized by rf magnetron sputtering. The influence of ultraviolet (UV) illumination on electrical characteristics of the nc-Al/AlN thin film system has been investigated. It is shown that the UV illumination could lead to a random chang...

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Bibliographic Details
Main Authors: Liu, Zhen, Chen, Tupei, Liu, Yang, Ding, Liang, Yang, Ming, Wong, Jen It, Cen, Zhan Hong, Li, Yibin, Zhang, Sam, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Online Access:https://hdl.handle.net/10356/91842
http://hdl.handle.net/10220/6402
Description
Summary:Al nanocrystals (nc-Al) embedded in AlN thin films have been synthesized by rf magnetron sputtering. The influence of ultraviolet (UV) illumination on electrical characteristics of the nc-Al/AlN thin film system has been investigated. It is shown that the UV illumination could lead to a random change in the conductance of the thin film system. The change in the conductance is attributed to the charge trapping and detrapping in the nc-Al due to the UV illumination.

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