Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions

The measurements of optical transmission, photoluminescence (PL), and PL excitation (PLE) of Si-implanted silicon nitride thin films annealed at various temperatures have been conducted. A red PL band at ~680 nm is largely enhanced by the Si implantation followed by thermal annealing. The excitatio...

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Bibliographic Details
Main Authors:	Ye, J. D., Ding, Liang, Liu, Yang, Wong, Jen It, Fung, Stevenson Hon Yuen, Cen, Zhan Hong, Chen, Tupei, Liu, Zhen, Yang, Ming
Other Authors:	School of Electrical and Electronic Engineering
Format:	Journal Article
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:	https://hdl.handle.net/10356/91848 http://hdl.handle.net/10220/6422

Internet

https://hdl.handle.net/10356/91848
http://hdl.handle.net/10220/6422

Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions

Internet

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