Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance
In this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate. The nc-Si is synthesized by Si-ion imp...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/91849 http://hdl.handle.net/10220/6403 |
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| author | Zhao, P. Yang, X. H. Ng, Chi Yung Chen, Tupei Ding, Liang Yang, Ming Wong, Jen It Tse, Man Siu Trigg, Alastair David Fung, Stevenson Hon Yuen |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhao, P. Yang, X. H. Ng, Chi Yung Chen, Tupei Ding, Liang Yang, Ming Wong, Jen It Tse, Man Siu Trigg, Alastair David Fung, Stevenson Hon Yuen |
| author_sort | Zhao, P. |
| collection | NTU |
| description | In this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate. The nc-Si is synthesized by Si-ion implantation. The effective dielectric constant of the gate oxide in the nc-Si distributed region is calculated based on a sublayer model of the nc-Si distribution and the Maxwell-Garnett effective medium approximation. After the depth distribution of the effective dielectric constant is obtained, the MOS capacitance is determined. Two different nc-Si distributions, i.e., partial and full nc-Si distributions in the gate oxide, have been considered. The MOS capacitance obtained from the modeling has been compared to the capacitance measurement for a number of samples with various gate-oxide thicknesses, implantation energies and dosages, and an excellent agreement has been achieved for all the samples. A detailed picture of the influence of implantation energy and implantation dosage on the MOS capacitance has been obtained. |
| first_indexed | 2025-02-19T03:54:12Z |
| format | Journal Article |
| id | ntu-10356/91849 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:54:12Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/918492020-03-07T13:57:27Z Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance Zhao, P. Yang, X. H. Ng, Chi Yung Chen, Tupei Ding, Liang Yang, Ming Wong, Jen It Tse, Man Siu Trigg, Alastair David Fung, Stevenson Hon Yuen School of Electrical and Electronic Engineering A*STAR Institute of Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics In this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate. The nc-Si is synthesized by Si-ion implantation. The effective dielectric constant of the gate oxide in the nc-Si distributed region is calculated based on a sublayer model of the nc-Si distribution and the Maxwell-Garnett effective medium approximation. After the depth distribution of the effective dielectric constant is obtained, the MOS capacitance is determined. Two different nc-Si distributions, i.e., partial and full nc-Si distributions in the gate oxide, have been considered. The MOS capacitance obtained from the modeling has been compared to the capacitance measurement for a number of samples with various gate-oxide thicknesses, implantation energies and dosages, and an excellent agreement has been achieved for all the samples. A detailed picture of the influence of implantation energy and implantation dosage on the MOS capacitance has been obtained. Published version 2010-09-06T01:27:07Z 2019-12-06T18:13:02Z 2010-09-06T01:27:07Z 2019-12-06T18:13:02Z 2006 2006 Journal Article Zhao, P., Yang, X. H., Ng, C. Y., Chen, T., Ding, L., & Yang, M., et al. (2006). Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance. IEEE transactions on electron devices, 53(4), 730-736. 0018-9383 https://hdl.handle.net/10356/91849 http://hdl.handle.net/10220/6403 10.1109/TED.2006.870872 en IEEE transactions on electron devices IEEE Transactions on Electron Devices © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 7 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Zhao, P. Yang, X. H. Ng, Chi Yung Chen, Tupei Ding, Liang Yang, Ming Wong, Jen It Tse, Man Siu Trigg, Alastair David Fung, Stevenson Hon Yuen Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance |
| title | Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance |
| title_full | Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance |
| title_fullStr | Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance |
| title_full_unstemmed | Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance |
| title_short | Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance |
| title_sort | influence of si nanocrystal distributed in the gate oxide on the mos capacitance |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/91849 http://hdl.handle.net/10220/6403 |
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