Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing
Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 degrees celcius for 30 s. The annealing results in a maximum d...
| Hoofdauteurs: | , , , |
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| Andere auteurs: | |
| Formaat: | Journal Article |
| Taal: | English |
| Gepubliceerd in: |
2010
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| Onderwerpen: | |
| Online toegang: | https://hdl.handle.net/10356/92080 http://hdl.handle.net/10220/6409 |
| _version_ | 1826109477151047680 |
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| author | Xu, C. D. Mei, Ting Nie, Dong Dong, Jian Rong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Xu, C. D. Mei, Ting Nie, Dong Dong, Jian Rong |
| author_sort | Xu, C. D. |
| collection | NTU |
| description | Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 degrees celcius for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity. |
| first_indexed | 2024-10-01T02:18:51Z |
| format | Journal Article |
| id | ntu-10356/92080 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:18:51Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/920802020-03-07T13:56:08Z Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing Xu, C. D. Mei, Ting Nie, Dong Dong, Jian Rong School of Electrical and Electronic Engineering A*STAR Institute of Materials Research and Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 degrees celcius for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity. Published version 2010-09-06T04:01:29Z 2019-12-06T18:17:02Z 2010-09-06T04:01:29Z 2019-12-06T18:17:02Z 2006 2006 Journal Article Xu, C. D., Mei, T., Nie, D., & Dong J. R. (2006). Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing. Applied Physics Letters, 89, 1-3. 0003-6951 https://hdl.handle.net/10356/92080 http://hdl.handle.net/10220/6409 10.1063/1.2357563 en Applied physics letters Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i13/p131103_s1?isAuthorized=no 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Xu, C. D. Mei, Ting Nie, Dong Dong, Jian Rong Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing |
| title | Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing |
| title_full | Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing |
| title_fullStr | Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing |
| title_full_unstemmed | Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing |
| title_short | Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing |
| title_sort | halftoning band gap of inas inp quantum dots using inductively coupled argon plasma enhanced intermixing |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials |
| url | https://hdl.handle.net/10356/92080 http://hdl.handle.net/10220/6409 |
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