Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
Recently, AlGaN/GaN HEMTs grown on 100 mm diameter Si using plasma assisted molecular beam epitaxy (PA-MBE) have been demonstrated [1,2]. In these structures, the growth rate is limited by the active nitrogen species available from the nitrogen plasma. Co...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/92221 http://hdl.handle.net/10220/7079 |