Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film
The static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell–Garnett effective medium approximation and the stopping and range of ions in matter simulation. F...
| Glavni autori: | , , , , , , |
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| Daljnji autori: | |
| Format: | Journal Article |
| Jezik: | English |
| Izdano: |
2010
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| Teme: | |
| Online pristup: | https://hdl.handle.net/10356/92224 http://hdl.handle.net/10220/6406 |
| Sažetak: | The static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell–Garnett effective medium approximation and the stopping and range of ions in matter simulation. For the nc-Si with a mean size of ∼ 4.5 nm, the dielectric constant so determined is 9.8, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si-based memory devices. |
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