Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film
The static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell–Garnett effective medium approximation and the stopping and range of ions in matter simulation. F...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/92224 http://hdl.handle.net/10220/6406 |
| _version_ | 1826119029814722560 |
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| author | Ng, Chi Yung Chen, Tupei Ding, Liang Liu, Yang Fung, Stevenson Hon Yuen Tse, Man Siu Dong, Zhili |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ng, Chi Yung Chen, Tupei Ding, Liang Liu, Yang Fung, Stevenson Hon Yuen Tse, Man Siu Dong, Zhili |
| author_sort | Ng, Chi Yung |
| collection | NTU |
| description | The static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell–Garnett effective medium approximation and the stopping and range of ions in matter simulation. For the nc-Si with a mean size of ∼ 4.5 nm, the dielectric constant so determined is 9.8, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si-based memory devices. |
| first_indexed | 2024-10-01T04:53:21Z |
| format | Journal Article |
| id | ntu-10356/92224 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:53:21Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/922242020-03-07T13:57:29Z Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film Ng, Chi Yung Chen, Tupei Ding, Liang Liu, Yang Fung, Stevenson Hon Yuen Tse, Man Siu Dong, Zhili School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics The static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell–Garnett effective medium approximation and the stopping and range of ions in matter simulation. For the nc-Si with a mean size of ∼ 4.5 nm, the dielectric constant so determined is 9.8, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si-based memory devices. Published version 2010-09-06T03:05:53Z 2019-12-06T18:19:34Z 2010-09-06T03:05:53Z 2019-12-06T18:19:34Z 2006 2006 Journal Article Ng, C. Y., Chen, T. P., Ding, L., Liu, Y., Fung, S. H. Y., Tse, M. S., et al. (2006). Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film. Applied Physics Letters, 88, 1-3. 0003-6951 https://hdl.handle.net/10356/92224 http://hdl.handle.net/10220/6406 10.1063/1.2172009 en Applied physics letters Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v88/i6/p063103_s1?isAuthorized=no 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Ng, Chi Yung Chen, Tupei Ding, Liang Liu, Yang Fung, Stevenson Hon Yuen Tse, Man Siu Dong, Zhili Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film |
| title | Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film |
| title_full | Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film |
| title_fullStr | Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film |
| title_full_unstemmed | Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film |
| title_short | Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film |
| title_sort | static dielectric constant of isolated silicon nanocrystals embedded in a sio2 thin film |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/92224 http://hdl.handle.net/10220/6406 |
| work_keys_str_mv | AT ngchiyung staticdielectricconstantofisolatedsiliconnanocrystalsembeddedinasio2thinfilm AT chentupei staticdielectricconstantofisolatedsiliconnanocrystalsembeddedinasio2thinfilm AT dingliang staticdielectricconstantofisolatedsiliconnanocrystalsembeddedinasio2thinfilm AT liuyang staticdielectricconstantofisolatedsiliconnanocrystalsembeddedinasio2thinfilm AT fungstevensonhonyuen staticdielectricconstantofisolatedsiliconnanocrystalsembeddedinasio2thinfilm AT tsemansiu staticdielectricconstantofisolatedsiliconnanocrystalsembeddedinasio2thinfilm AT dongzhili staticdielectricconstantofisolatedsiliconnanocrystalsembeddedinasio2thinfilm |