Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film

Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film

The static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell–Garnett effective medium approximation and the stopping and range of ions in matter simulation. F...

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Bibliographic Details
Main Authors: Ng, Chi Yung, Chen, Tupei, Ding, Liang, Liu, Yang, Fung, Stevenson Hon Yuen, Tse, Man Siu, Dong, Zhili
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2010
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Online Access:https://hdl.handle.net/10356/92224
http://hdl.handle.net/10220/6406

Internet

https://hdl.handle.net/10356/92224
http://hdl.handle.net/10220/6406

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