Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition
This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of...
| Κύριοι συγγραφείς: | , |
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| Άλλοι συγγραφείς: | |
| Μορφή: | Journal Article |
| Γλώσσα: | English |
| Έκδοση: |
2011
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| Θέματα: | |
| Διαθέσιμο Online: | https://hdl.handle.net/10356/92386 http://hdl.handle.net/10220/6959 |
| Περίληψη: | This communication reports on the novel work of creating a transistor channel based on functionalized
single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of
drop-cast though convenient was unable to produce replicable transistor device due to its inherent
inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization
was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good
transistor device. |
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