Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition
This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/92386 http://hdl.handle.net/10220/6959 |
| _version_ | 1811683124153679872 |
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| author | Fam, Derrick Wen Hui Tok, Alfred Iing Yoong |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Fam, Derrick Wen Hui Tok, Alfred Iing Yoong |
| author_sort | Fam, Derrick Wen Hui |
| collection | NTU |
| description | This communication reports on the novel work of creating a transistor channel based on functionalized
single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of
drop-cast though convenient was unable to produce replicable transistor device due to its inherent
inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization
was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good
transistor device. |
| first_indexed | 2024-10-01T04:07:44Z |
| format | Journal Article |
| id | ntu-10356/92386 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:07:44Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/923862023-07-14T15:45:07Z Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition Fam, Derrick Wen Hui Tok, Alfred Iing Yoong School of Materials Science & Engineering DRNTU::Engineering::Materials::Nanostructured materials This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of drop-cast though convenient was unable to produce replicable transistor device due to its inherent inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good transistor device. Accepted version 2011-08-12T04:25:50Z 2019-12-06T18:22:25Z 2011-08-12T04:25:50Z 2019-12-06T18:22:25Z 2009 2009 Journal Article Fam, D. W. H., & Tok, A. I. Y. (2009). Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition. Journal of Colloid and Interface Science, 338, 266-269. https://hdl.handle.net/10356/92386 http://hdl.handle.net/10220/6959 10.1016/j.jcis.2009.06.003 157868 en Journal of colloid and interface science © 2009 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Colloid and Interface Science, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: http://dx.doi.org/10.1016/j.jcis.2009.06.003. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Nanostructured materials Fam, Derrick Wen Hui Tok, Alfred Iing Yoong Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition |
| title | Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition |
| title_full | Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition |
| title_fullStr | Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition |
| title_full_unstemmed | Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition |
| title_short | Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition |
| title_sort | mono distributed single walled carbon nanotube channel in field effect transistors fets using electrostatic atomization deposition |
| topic | DRNTU::Engineering::Materials::Nanostructured materials |
| url | https://hdl.handle.net/10356/92386 http://hdl.handle.net/10220/6959 |
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