Concurrent nonvolatile resistance and capacitance switching in LaAlO3
We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO3/Nb:SrTiO3 heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high capacitance st...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2011
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| Online Access: | https://hdl.handle.net/10356/92389 http://hdl.handle.net/10220/6923 |
| _version_ | 1811688883244498944 |
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| author | Wu, Shuxiang Peng, Haiyang Wu, Tom |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Wu, Shuxiang Peng, Haiyang Wu, Tom |
| author_sort | Wu, Shuxiang |
| collection | NTU |
| description | We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO3/Nb:SrTiO3 heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high capacitance state while a forward bias drives it into a high resistance and low capacitance state. Our experiments suggest that both the formation of conducting filaments and the modulation of interface barrier contribute to the resistance switching. Oxygen vacancies play critical roles in determining the switching characteristics and can be controlled in the process of device fabrication. |
| first_indexed | 2024-10-01T05:39:17Z |
| format | Journal Article |
| id | ntu-10356/92389 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:39:17Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/923892023-07-14T15:57:05Z Concurrent nonvolatile resistance and capacitance switching in LaAlO3 Wu, Shuxiang Peng, Haiyang Wu, Tom School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO3/Nb:SrTiO3 heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high capacitance state while a forward bias drives it into a high resistance and low capacitance state. Our experiments suggest that both the formation of conducting filaments and the modulation of interface barrier contribute to the resistance switching. Oxygen vacancies play critical roles in determining the switching characteristics and can be controlled in the process of device fabrication. Published version 2011-07-19T04:50:14Z 2019-12-06T18:22:28Z 2011-07-19T04:50:14Z 2019-12-06T18:22:28Z 2011 2011 Journal Article Wu, S., Pen, H., & Wu, T. (2011). Concurrent nonvolatile resistance and capacitance switching in LaAlO3. Applied physics letters, 98. 0003-6951 https://hdl.handle.net/10356/92389 http://hdl.handle.net/10220/6923 doi:10.1063/1.3560257 160546 en Applied physics letters Applied Physics Letters © copyright 1997 American Institute of Physics. The journal's website is located at http://apl.aip.org/. 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Wu, Shuxiang Peng, Haiyang Wu, Tom Concurrent nonvolatile resistance and capacitance switching in LaAlO3 |
| title | Concurrent nonvolatile resistance and capacitance switching in LaAlO3 |
| title_full | Concurrent nonvolatile resistance and capacitance switching in LaAlO3 |
| title_fullStr | Concurrent nonvolatile resistance and capacitance switching in LaAlO3 |
| title_full_unstemmed | Concurrent nonvolatile resistance and capacitance switching in LaAlO3 |
| title_short | Concurrent nonvolatile resistance and capacitance switching in LaAlO3 |
| title_sort | concurrent nonvolatile resistance and capacitance switching in laalo3 |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials |
| url | https://hdl.handle.net/10356/92389 http://hdl.handle.net/10220/6923 |
| work_keys_str_mv | AT wushuxiang concurrentnonvolatileresistanceandcapacitanceswitchinginlaalo3 AT penghaiyang concurrentnonvolatileresistanceandcapacitanceswitchinginlaalo3 AT wutom concurrentnonvolatileresistanceandcapacitanceswitchinginlaalo3 |