Zinc oxide nanodisk
Using the mixture of zinc oxide and graphite powders as source materials, zinc oxide nanodisks with bulk quantity were fabricated by vapor-phase transport method. The nanodisks have perfect hexagonal shape with about 3 μm in diagonal and 300 nm in thickness. The growth is favored along six symmetric...
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Format: | Journal Article |
Language: | English |
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2011
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Online Access: | https://hdl.handle.net/10356/93775 http://hdl.handle.net/10220/6888 |
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author | Yu, M. B. Xu, Chunxiang Sun, Xiaowei Dong, Zhili |
author2 | School of Materials Science & Engineering |
author_facet | School of Materials Science & Engineering Yu, M. B. Xu, Chunxiang Sun, Xiaowei Dong, Zhili |
author_sort | Yu, M. B. |
collection | NTU |
description | Using the mixture of zinc oxide and graphite powders as source materials, zinc oxide nanodisks with bulk quantity were fabricated by vapor-phase transport method. The nanodisks have perfect hexagonal shape with about 3 μm in diagonal and 300 nm in thickness. The growth is favored along six symmetric directions of ±[1010], ±[1100], and ±[0110] with the typical growth along [0001] direction suppressed, which directly leads to the formation of zinc oxide nanodisk. The microstructure and growth mechanism are discussed. |
first_indexed | 2024-10-01T02:29:53Z |
format | Journal Article |
id | ntu-10356/93775 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T02:29:53Z |
publishDate | 2011 |
record_format | dspace |
spelling | ntu-10356/937752023-07-14T15:50:20Z Zinc oxide nanodisk Yu, M. B. Xu, Chunxiang Sun, Xiaowei Dong, Zhili School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Using the mixture of zinc oxide and graphite powders as source materials, zinc oxide nanodisks with bulk quantity were fabricated by vapor-phase transport method. The nanodisks have perfect hexagonal shape with about 3 μm in diagonal and 300 nm in thickness. The growth is favored along six symmetric directions of ±[1010], ±[1100], and ±[0110] with the typical growth along [0001] direction suppressed, which directly leads to the formation of zinc oxide nanodisk. The microstructure and growth mechanism are discussed. Published version 2011-07-12T04:41:09Z 2019-12-06T18:45:21Z 2011-07-12T04:41:09Z 2019-12-06T18:45:21Z 2004 2004 Journal Article Xu, C. X., Sun, X., Dong, Z. L., & Yu, M. B. (2004). Zinc oxide nanodisk. Applied Physics Letters, 85 (17), 3878-3880. https://hdl.handle.net/10356/93775 http://hdl.handle.net/10220/6888 10.1063/1.1811380 en Applied physics letters © 2004 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [DOI: http://dx.doi.org/10.1063/1.1811380]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Yu, M. B. Xu, Chunxiang Sun, Xiaowei Dong, Zhili Zinc oxide nanodisk |
title | Zinc oxide nanodisk |
title_full | Zinc oxide nanodisk |
title_fullStr | Zinc oxide nanodisk |
title_full_unstemmed | Zinc oxide nanodisk |
title_short | Zinc oxide nanodisk |
title_sort | zinc oxide nanodisk |
topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials |
url | https://hdl.handle.net/10356/93775 http://hdl.handle.net/10220/6888 |
work_keys_str_mv | AT yumb zincoxidenanodisk AT xuchunxiang zincoxidenanodisk AT sunxiaowei zincoxidenanodisk AT dongzhili zincoxidenanodisk |