Influence of nanocrystal distribution on electroluminescence from Si+-implanted SiO2 thin films
Light emitting diodes (LEDs) based on a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in SiO2 have been fabricated with low-energy ion implantation. Under a negative gate voltage as low as ~-5 V, both visible and infrared (IR) electroluminescence (EL) have...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/93791 http://hdl.handle.net/10220/6939 |