Average density of states in disordered graphene systems
In this paper, the average density of states (ADOS) in graphene with binary alloy disorders is calculated by the recursion method. We observed an obvious resonant peak and a dip in ADOS curves near the Dirac point, which result from interactions with surrounding impurities. We also found that the re...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2011
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| Online Access: | https://hdl.handle.net/10356/93833 http://hdl.handle.net/10220/6906 |
| _version_ | 1826114837526085632 |
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| author | Wu, Shangduan Jing, Lei Li, Qunxiang Shi, Q. W. Chen, Jie Su, Haibin Wang, Xiaoping Yang, Jinlong |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Wu, Shangduan Jing, Lei Li, Qunxiang Shi, Q. W. Chen, Jie Su, Haibin Wang, Xiaoping Yang, Jinlong |
| author_sort | Wu, Shangduan |
| collection | NTU |
| description | In this paper, the average density of states (ADOS) in graphene with binary alloy disorders is calculated by the recursion method. We observed an obvious resonant peak and a dip in ADOS curves near the Dirac point, which result from interactions with surrounding impurities. We also found that the resonance energy (Er) and the dip position (εdip) are strongly dependent on the concentration of disorders (x) and their on-site potentials (v). A linear relation, εdip=xv, holds when the impurity concentration is low. This relation can also be extended when the impurity concentration is high, but with certain constraints. We also compute ADOS with a finite density of vacancies. |
| first_indexed | 2024-10-01T03:45:43Z |
| format | Journal Article |
| id | ntu-10356/93833 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:45:43Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/938332023-07-14T15:51:11Z Average density of states in disordered graphene systems Wu, Shangduan Jing, Lei Li, Qunxiang Shi, Q. W. Chen, Jie Su, Haibin Wang, Xiaoping Yang, Jinlong School of Materials Science & Engineering DRNTU::Engineering::Materials::Nanostructured materials In this paper, the average density of states (ADOS) in graphene with binary alloy disorders is calculated by the recursion method. We observed an obvious resonant peak and a dip in ADOS curves near the Dirac point, which result from interactions with surrounding impurities. We also found that the resonance energy (Er) and the dip position (εdip) are strongly dependent on the concentration of disorders (x) and their on-site potentials (v). A linear relation, εdip=xv, holds when the impurity concentration is low. This relation can also be extended when the impurity concentration is high, but with certain constraints. We also compute ADOS with a finite density of vacancies. Published version 2011-07-14T06:27:16Z 2019-12-06T18:46:21Z 2011-07-14T06:27:16Z 2019-12-06T18:46:21Z 2008 2008 Journal Article Wu, S., Jing, L., Li, Q., Shi, Q. W., Chen, J., Su, H., et al. (2008). Average density of states in disordered graphene systems. Physical Review B, 77. https://hdl.handle.net/10356/93833 http://hdl.handle.net/10220/6906 10.1103/PhysRevB.77.195411 en Physical review B © 2008 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at: [DOI: http://dx.doi.org/10.1103/PhysRevB.77.195411]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 7 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Nanostructured materials Wu, Shangduan Jing, Lei Li, Qunxiang Shi, Q. W. Chen, Jie Su, Haibin Wang, Xiaoping Yang, Jinlong Average density of states in disordered graphene systems |
| title | Average density of states in disordered graphene systems |
| title_full | Average density of states in disordered graphene systems |
| title_fullStr | Average density of states in disordered graphene systems |
| title_full_unstemmed | Average density of states in disordered graphene systems |
| title_short | Average density of states in disordered graphene systems |
| title_sort | average density of states in disordered graphene systems |
| topic | DRNTU::Engineering::Materials::Nanostructured materials |
| url | https://hdl.handle.net/10356/93833 http://hdl.handle.net/10220/6906 |
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