Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ
We have performed systematic studies of the trend of the critical temperature Tc due to both Madelung site potential difference between in-plane oxygen and copper sites ΔVM and interlayer effect in the optimally doped 123 superconductors RBa2Cu3O7−δ. ΔVM is found to decrease with the i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2011
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| Online Access: | https://hdl.handle.net/10356/93915 http://hdl.handle.net/10220/6929 |
| _version_ | 1811692017506320384 |
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| author | Chen, Xiao Jia Su, Haibin |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Chen, Xiao Jia Su, Haibin |
| author_sort | Chen, Xiao Jia |
| collection | NTU |
| description | We have performed systematic studies of the trend of the critical temperature Tc due to both Madelung site
potential difference between in-plane oxygen and copper sites ΔVM and interlayer effect in the optimally doped
123 superconductors RBa2Cu3O7−δ. ΔVM is found to decrease with the increase of the trivalent rare-earth ionic
radius rR3+. This change enhances the next-nearest-neighbor hopping integral t', which results in the experimentally
observed increase of Tc with rR3+. The coherent interlayer single-particle hopping t⊥ has a more
profound effect than t' on the nearly linear trend of Tc as a function of rR3+. These results reveal the importance
of the electronic origin of the rare-earth ionic size effect on Tc in this family. |
| first_indexed | 2024-10-01T06:29:06Z |
| format | Journal Article |
| id | ntu-10356/93915 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:29:06Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/939152023-07-14T15:52:33Z Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ Chen, Xiao Jia Su, Haibin School of Materials Science & Engineering DRNTU::Engineering::Materials::Magnetic materials We have performed systematic studies of the trend of the critical temperature Tc due to both Madelung site potential difference between in-plane oxygen and copper sites ΔVM and interlayer effect in the optimally doped 123 superconductors RBa2Cu3O7−δ. ΔVM is found to decrease with the increase of the trivalent rare-earth ionic radius rR3+. This change enhances the next-nearest-neighbor hopping integral t', which results in the experimentally observed increase of Tc with rR3+. The coherent interlayer single-particle hopping t⊥ has a more profound effect than t' on the nearly linear trend of Tc as a function of rR3+. These results reveal the importance of the electronic origin of the rare-earth ionic size effect on Tc in this family. Published version 2011-07-19T06:58:43Z 2019-12-06T18:47:40Z 2011-07-19T06:58:43Z 2019-12-06T18:47:40Z 2005 2005 Journal Article Chen, X. J., & Su, H. (2005). Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ. Physical Review B, 71. https://hdl.handle.net/10356/93915 http://hdl.handle.net/10220/6929 10.1103/PhysRevB.71.094512 en Physical review B © 2005 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at: [DOI: http://dx.doi.org/10.1103/PhysRevB.71.094512]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 6 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Magnetic materials Chen, Xiao Jia Su, Haibin Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ |
| title | Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ |
| title_full | Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ |
| title_fullStr | Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ |
| title_full_unstemmed | Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ |
| title_short | Electronic mechanism of critical temperature variation in RBa2Cu3O7−δ |
| title_sort | electronic mechanism of critical temperature variation in rba2cu3o7 δ |
| topic | DRNTU::Engineering::Materials::Magnetic materials |
| url | https://hdl.handle.net/10356/93915 http://hdl.handle.net/10220/6929 |
| work_keys_str_mv | AT chenxiaojia electronicmechanismofcriticaltemperaturevariationinrba2cu3o7d AT suhaibin electronicmechanismofcriticaltemperaturevariationinrba2cu3o7d |