Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

The crystallization temperature of Bi1.5Zn0.5Nb1.5O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found tha...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Cheng, Jian Gong, Wang, Junling, Dechakupt, Tanawadee, Trolier-McKinstry, Susan
Muut tekijät: School of Materials Science & Engineering
Aineistotyyppi: Journal Article
Kieli:English
Julkaistu: 2011
Aiheet:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Linkit:https://hdl.handle.net/10356/93933
http://hdl.handle.net/10220/6913

Internet

https://hdl.handle.net/10356/93933
http://hdl.handle.net/10220/6913

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