A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode
Single-crystalline zero-dimensional tin dioxide (SnO2) nanoparticles and one-dimensional SnO2 nanobelts were synthesized on silicon (Si) substrates with different seed layer coatings by simple vapor-phase transport method. The crystal structure and morphology of the as-synthesized products were char...
| Main Authors: | , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2011
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/94079 http://hdl.handle.net/10220/7412 |
| _version_ | 1824454689386659840 |
|---|---|
| author | Chen, Rui Sun, Handong Dong, Zhili Ling, Bo Sun, Xiaowei Zhao, Jun Liang Ke, Chang Tan, Swee Tiam |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Chen, Rui Sun, Handong Dong, Zhili Ling, Bo Sun, Xiaowei Zhao, Jun Liang Ke, Chang Tan, Swee Tiam |
| author_sort | Chen, Rui |
| collection | NTU |
| description | Single-crystalline zero-dimensional tin dioxide (SnO2) nanoparticles and one-dimensional SnO2 nanobelts were synthesized on silicon (Si) substrates with different seed layer coatings by simple vapor-phase transport method. The crystal structure and morphology of the as-synthesized products were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman scattering spectroscopy. Both geometrically different nanostructures were further employed to fabricate the light-emitting diodes and showed dominant red and green emission bands at room temperature, which were ascribed to the deep defect states in SnO2. However, SnO2-nanobelts-based light-emitting diodes showed another violet emission peaking at ca. 400 nm which was attributed to the shallow defect state related to the surface states/defects. The different emission performance between nanoparticle and nanobelts devices was attributed to the larger surface-to-volume ratio of the nanobelts, which was confirmed by the Raman and photoluminescence analysis. A thin SiO2 intermediate layer was found to be crucial in achieving light emission from a n-SnO2/p-Si heterojunction with large valence band offset (ca. 2.96 eV), by which sufficient potential-energy difference can be maintained between SnO2 and Si, thus facilitating the tunneling injection of holes. |
| first_indexed | 2025-02-19T03:26:18Z |
| format | Journal Article |
| id | ntu-10356/94079 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:26:18Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/940792020-06-01T10:26:30Z A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode Chen, Rui Sun, Handong Dong, Zhili Ling, Bo Sun, Xiaowei Zhao, Jun Liang Ke, Chang Tan, Swee Tiam School of Materials Science & Engineering DRNTU::Engineering::Materials::Nanostructured materials Single-crystalline zero-dimensional tin dioxide (SnO2) nanoparticles and one-dimensional SnO2 nanobelts were synthesized on silicon (Si) substrates with different seed layer coatings by simple vapor-phase transport method. The crystal structure and morphology of the as-synthesized products were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman scattering spectroscopy. Both geometrically different nanostructures were further employed to fabricate the light-emitting diodes and showed dominant red and green emission bands at room temperature, which were ascribed to the deep defect states in SnO2. However, SnO2-nanobelts-based light-emitting diodes showed another violet emission peaking at ca. 400 nm which was attributed to the shallow defect state related to the surface states/defects. The different emission performance between nanoparticle and nanobelts devices was attributed to the larger surface-to-volume ratio of the nanobelts, which was confirmed by the Raman and photoluminescence analysis. A thin SiO2 intermediate layer was found to be crucial in achieving light emission from a n-SnO2/p-Si heterojunction with large valence band offset (ca. 2.96 eV), by which sufficient potential-energy difference can be maintained between SnO2 and Si, thus facilitating the tunneling injection of holes. 2011-12-16T03:28:10Z 2019-12-06T18:50:23Z 2011-12-16T03:28:10Z 2019-12-06T18:50:23Z 2010 2010 Journal Article Ling, B., Sun, X., Zhao, J. L., Ke, C., Tan, S. T., Chen, R., & et al. (2010). A SnO2 Nanoparticle/Nanobelt and Si Heterojunction Light-Emitting Diode. Journal of Physical Chemistry C, 114 (43), 18390–18395. https://hdl.handle.net/10356/94079 http://hdl.handle.net/10220/7412 10.1021/jp106650p en Journal of physical chemistry C © 2010 American Chemical Society |
| spellingShingle | DRNTU::Engineering::Materials::Nanostructured materials Chen, Rui Sun, Handong Dong, Zhili Ling, Bo Sun, Xiaowei Zhao, Jun Liang Ke, Chang Tan, Swee Tiam A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode |
| title | A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode |
| title_full | A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode |
| title_fullStr | A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode |
| title_full_unstemmed | A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode |
| title_short | A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode |
| title_sort | sno2 nanoparticle nanobelt and si heterojunction light emitting diode |
| topic | DRNTU::Engineering::Materials::Nanostructured materials |
| url | https://hdl.handle.net/10356/94079 http://hdl.handle.net/10220/7412 |
| work_keys_str_mv | AT chenrui asno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT sunhandong asno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT dongzhili asno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT lingbo asno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT sunxiaowei asno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT zhaojunliang asno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT kechang asno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT tansweetiam asno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT chenrui sno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT sunhandong sno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT dongzhili sno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT lingbo sno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT sunxiaowei sno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT zhaojunliang sno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT kechang sno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode AT tansweetiam sno2nanoparticlenanobeltandsiheterojunctionlightemittingdiode |