Analytical modeling of reservoir effect on electromigration in Cu interconnects
Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there ex...
| প্রধান লেখক: | , , , , , , |
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| অন্যান্য লেখক: | |
| বিন্যাস: | Journal Article |
| ভাষা: | English |
| প্রকাশিত: |
2012
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://hdl.handle.net/10356/94251 http://hdl.handle.net/10220/7709 |
| সংক্ষিপ্ত: | Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model. |
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