Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor
In this letter, the authors study the importance of a low temperature anneal in the removal of crystalline defects resulting from pulsed laser annealing of preamorphized ultrashallow p+ln junction. Using an additional low thermal budget rapid thermal annealing at 600 °C for 60 s, suppression of junc...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Online Access: | https://hdl.handle.net/10356/94356 http://hdl.handle.net/10220/8062 |
| _version_ | 1826123407659368448 |
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| author | Ong, K. K. Pey, Kin Leong Lee, Pooi See Wee, A. T. S. Wang, X. C. Tung, Chih Hang Tang, L. J. Chong, Y. F. |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Ong, K. K. Pey, Kin Leong Lee, Pooi See Wee, A. T. S. Wang, X. C. Tung, Chih Hang Tang, L. J. Chong, Y. F. |
| author_sort | Ong, K. K. |
| collection | NTU |
| description | In this letter, the authors study the importance of a low temperature anneal in the removal of crystalline defects resulting from pulsed laser annealing of preamorphized ultrashallow p+ln junction. Using an additional low thermal budget rapid thermal annealing at 600 °C for 60 s, suppression of junction leakage current of two orders in a single-pulse laser annealing and one order in a ten-pulse laser annealing is achieved through a reduction of the residual crystalline defects that could not be annihilated by laser annealing. p-channel metal-oxide-semiconductor field effect transistors with good electrical characteristics can be obtained using pulsed laser annealing followed by a low thermal budget rapid thermal annealing. |
| first_indexed | 2024-10-01T06:04:10Z |
| format | Journal Article |
| id | ntu-10356/94356 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:04:10Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/943562023-07-14T15:53:45Z Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor Ong, K. K. Pey, Kin Leong Lee, Pooi See Wee, A. T. S. Wang, X. C. Tung, Chih Hang Tang, L. J. Chong, Y. F. School of Materials Science & Engineering DRNTU::Engineering::Materials In this letter, the authors study the importance of a low temperature anneal in the removal of crystalline defects resulting from pulsed laser annealing of preamorphized ultrashallow p+ln junction. Using an additional low thermal budget rapid thermal annealing at 600 °C for 60 s, suppression of junction leakage current of two orders in a single-pulse laser annealing and one order in a ten-pulse laser annealing is achieved through a reduction of the residual crystalline defects that could not be annihilated by laser annealing. p-channel metal-oxide-semiconductor field effect transistors with good electrical characteristics can be obtained using pulsed laser annealing followed by a low thermal budget rapid thermal annealing. Published version 2012-05-17T03:01:41Z 2019-12-06T18:54:47Z 2012-05-17T03:01:41Z 2019-12-06T18:54:47Z 2006 2006 Journal Article Ong, K. K., Pey, K. L., Lee, P. S., Wee, A. T. S., Wang, X. C., Tung, C. H., et al. (2006). Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor. Applied Physics Letters, 89(12). https://hdl.handle.net/10356/94356 http://hdl.handle.net/10220/8062 10.1063/1.2354446 en Applied physics letters © 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2354446. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials Ong, K. K. Pey, Kin Leong Lee, Pooi See Wee, A. T. S. Wang, X. C. Tung, Chih Hang Tang, L. J. Chong, Y. F. Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor |
| title | Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor |
| title_full | Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor |
| title_fullStr | Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor |
| title_full_unstemmed | Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor |
| title_short | Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor |
| title_sort | role of low temperature rapid thermal annealing in post laser annealed p channel metal oxide semiconductor field effect transistor |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/94356 http://hdl.handle.net/10220/8062 |
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