Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor
In this letter, the authors study the importance of a low temperature anneal in the removal of crystalline defects resulting from pulsed laser annealing of preamorphized ultrashallow p+ln junction. Using an additional low thermal budget rapid thermal annealing at 600 °C for 60 s, suppression of junc...
| Main Authors: | , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/94356 http://hdl.handle.net/10220/8062 |