Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure
Large-sized thin-films composed of single- and few-layered graphene have been synthesized by chemical vapor deposition (CVD) on copper foils under atmospheric pressure using ethanol or pentane as the precursor. Confocal Raman measurements, transmission electron microscopy and sc...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/94435 http://hdl.handle.net/10220/7501 |
| _version_ | 1826110594378366976 |
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| author | Dong, Xiaochen Peng, Wang Fang, Wenjing Su, Ching-Yuan Chen, Yu-Hsin Li, Lain-Jong Huang, Wei Chen, Peng |
| author2 | School of Chemical and Biomedical Engineering |
| author_facet | School of Chemical and Biomedical Engineering Dong, Xiaochen Peng, Wang Fang, Wenjing Su, Ching-Yuan Chen, Yu-Hsin Li, Lain-Jong Huang, Wei Chen, Peng |
| author_sort | Dong, Xiaochen |
| collection | NTU |
| description | Large-sized thin-films composed of single- and few-layered graphene have been synthesized
by chemical vapor deposition (CVD) on copper foils under atmospheric pressure using
ethanol or pentane as the precursor. Confocal Raman measurements, transmission electron
microscopy and scanning tunneling microscopy show that the majority part of the
obtained films exhibit hexagonal graphene lattice. Optical microscopy and electrical measurements
confirm the continuity of these films. It is also found that the CVD-grown graphene
films with ethanol as the precursor exhibit lower defect density, higher electrical
conductivity, and higher hall mobility than those grown with pentane as the precursor.
This liquid-precursor-based atmospheric pressure CVD synthesis provides a new route
for simple, inexpensive and safe growth of graphene thin-films. |
| first_indexed | 2024-10-01T02:36:43Z |
| format | Journal Article |
| id | ntu-10356/94435 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:36:43Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/944352023-12-29T06:45:28Z Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure Dong, Xiaochen Peng, Wang Fang, Wenjing Su, Ching-Yuan Chen, Yu-Hsin Li, Lain-Jong Huang, Wei Chen, Peng School of Chemical and Biomedical Engineering Key Laboratory for Organic Electronics & Information Displays (KLOEID), Institute of Advanced Materials (IAM) Research Center for Applied Sciences, Academia Sinica, Taipei DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Large-sized thin-films composed of single- and few-layered graphene have been synthesized by chemical vapor deposition (CVD) on copper foils under atmospheric pressure using ethanol or pentane as the precursor. Confocal Raman measurements, transmission electron microscopy and scanning tunneling microscopy show that the majority part of the obtained films exhibit hexagonal graphene lattice. Optical microscopy and electrical measurements confirm the continuity of these films. It is also found that the CVD-grown graphene films with ethanol as the precursor exhibit lower defect density, higher electrical conductivity, and higher hall mobility than those grown with pentane as the precursor. This liquid-precursor-based atmospheric pressure CVD synthesis provides a new route for simple, inexpensive and safe growth of graphene thin-films. Accepted version 2012-02-06T01:24:35Z 2019-12-06T18:55:58Z 2012-02-06T01:24:35Z 2019-12-06T18:55:58Z 2011 2011 Journal Article Dong, X., Wang, P., Fang, W., Su, C. Y., Chen, Y. H., Li, L. J., et al. (2011). Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure. Carbon, 49(11), 3672-3678. https://hdl.handle.net/10356/94435 http://hdl.handle.net/10220/7501 10.1016/j.carbon.2011.04.069 163178 en Carbon © 2011 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Carbon, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [DOI: http://dx.doi.org/10.1016/j.carbon.2011.04.069] 18 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Dong, Xiaochen Peng, Wang Fang, Wenjing Su, Ching-Yuan Chen, Yu-Hsin Li, Lain-Jong Huang, Wei Chen, Peng Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure |
| title | Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure |
| title_full | Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure |
| title_fullStr | Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure |
| title_full_unstemmed | Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure |
| title_short | Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure |
| title_sort | growth of large sized graphene thin films by liquid precursor based chemical vapor deposition under atmospheric pressure |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | https://hdl.handle.net/10356/94435 http://hdl.handle.net/10220/7501 |
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