Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

We have developed a method based upon pulsed laser deposition to produce SrTiO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric. The high resolution transmission electron microscopy study revealed the complete isolation of SrTiO3 nanocrystals embedded in Lu2O...

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Main Authors: Yuan, C. L., Darmawan, P., Setiawan, Y., Lee, Pooi See, Ma, Jan
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/94591
http://hdl.handle.net/10220/8013
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author Yuan, C. L.
Darmawan, P.
Setiawan, Y.
Lee, Pooi See
Ma, Jan
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Yuan, C. L.
Darmawan, P.
Setiawan, Y.
Lee, Pooi See
Ma, Jan
author_sort Yuan, C. L.
collection NTU
description We have developed a method based upon pulsed laser deposition to produce SrTiO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric. The high resolution transmission electron microscopy study revealed the complete isolation of SrTiO3 nanocrystals embedded in Lu2O3 matrix with 4 nm diameter and well distributed with an area density estimated to be about 8x 10^11 cm−2. A pronounced capacitance-voltage hysteresis is observed with a memory window of ~1.5 V under the 6 V programming. In addition, the retention characteristics are tested to be robust.
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spelling ntu-10356/945912023-07-14T15:50:04Z Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See Ma, Jan School of Materials Science & Engineering DRNTU::Engineering::Materials We have developed a method based upon pulsed laser deposition to produce SrTiO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric. The high resolution transmission electron microscopy study revealed the complete isolation of SrTiO3 nanocrystals embedded in Lu2O3 matrix with 4 nm diameter and well distributed with an area density estimated to be about 8x 10^11 cm−2. A pronounced capacitance-voltage hysteresis is observed with a memory window of ~1.5 V under the 6 V programming. In addition, the retention characteristics are tested to be robust. Published version 2012-05-16T07:08:32Z 2019-12-06T18:58:49Z 2012-05-16T07:08:32Z 2019-12-06T18:58:49Z 2006 2006 Journal Article Yuan, C. L., Darmawan, P., Setiawan, Y., Lee, P. S., & Ma, J. (2006). Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application. Applied Physics Letters, 89(4). https://hdl.handle.net/10356/94591 http://hdl.handle.net/10220/8013 10.1063/1.2234302 en Applied physics letters © 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.2234302. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
spellingShingle DRNTU::Engineering::Materials
Yuan, C. L.
Darmawan, P.
Setiawan, Y.
Lee, Pooi See
Ma, Jan
Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
title Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
title_full Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
title_fullStr Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
title_full_unstemmed Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
title_short Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
title_sort formation of srtio3 nanocrystals in amorphous lu2o3 high k gate dielectric for floating gate memory application
topic DRNTU::Engineering::Materials
url https://hdl.handle.net/10356/94591
http://hdl.handle.net/10220/8013
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